Vovk Andrii, Popadiuk Dariia, Postolnyi Bogdan, Bunyaev Sergey, Štrichovanec Pavel, Pardo José Ángel, Algarabel Pedro Antonio, Salyuk Olga, Korenivski Vladislav, Kakazei Gleb N, Golub Vladimir O, Araujo João Pedro
Institute of Physics for Advanced Materials, Nanotechnology and Photonics (IFIMUP), Departamento de Fisica e Astronomia, Faculdade de Ciências, Universidade do Porto, 4169-007 Porto, Portugal.
Nanostructure Physics, Royal Institute of Technology, 10691 Stockholm, Sweden.
Nanomaterials (Basel). 2024 Oct 30;14(21):1745. doi: 10.3390/nano14211745.
The structure and magnetic properties of epitaxial Heusler alloy films (CoFeGe) deposited on MgO (100) substrates were investigated. Films of 60 nm thickness were prepared by magnetron co-sputtering at different substrate temperatures (T), and those deposited at room temperature were later annealed at various temperatures (T). X-ray diffraction confirmed (001) [110] CoFeGe || (001) [100] MgO epitaxial growth. A slight tetragonal distortion of the film cubic structure was found in all samples due to the tensile stress induced by the mismatch of the lattice parameters between CoFeGe and the substrate. Improved quality of epitaxy and the formation of an atomically ordered L2 structure were observed for films processed at elevated temperatures. The values of magnetization increased with increasing T and T. Ferromagnetic resonance (FMR) studies revealed 45° in-plane rotation of the easy anisotropy axis direction depending on the degree of the tetragonal distortion. The film annealed at T = 573 K possesses the minimal FMR linewidth and magnetic damping, while both these parameters increase for another T and T. Overall, this study underscores the crucial role of thermal treatment in optimizing the magnetic properties of CoFeGe films for potential spintronic and magnonic applications.
研究了在MgO(100)衬底上沉积的外延赫斯勒合金薄膜(CoFeGe)的结构和磁性。通过磁控共溅射在不同衬底温度(T)下制备了厚度为60 nm的薄膜,随后将室温下沉积的薄膜在不同温度(T)下进行退火处理。X射线衍射证实了(001)[110]CoFeGe || (001)[100]MgO的外延生长。由于CoFeGe与衬底之间晶格参数不匹配所引起的拉伸应力,在所有样品中均发现薄膜立方结构存在轻微的四方畸变。对于在高温下处理的薄膜,观察到外延质量的改善以及原子有序L2结构的形成。磁化强度值随T和T的增加而增大。铁磁共振(FMR)研究表明,易磁化轴方向的面内旋转角度为45°,这取决于四方畸变的程度。在T = 573 K下退火的薄膜具有最小的FMR线宽和磁阻尼,而对于其他T和T,这两个参数都会增加。总的来说,这项研究强调了热处理在优化CoFeGe薄膜的磁性以用于潜在的自旋电子学和磁子学应用方面的关键作用。