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二维III-VI族材料简单电子系统中的复杂电荷密度波

Complex charge density waves in simple electronic systems of two-dimensional III-VI materials.

作者信息

Huang Yu-Ting, Li Zhen-Ze, Chen Nian-Ke, Wang Yeliang, Sun Hong-Bo, Zhang Shengbai, Li Xian-Bin

机构信息

State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, China.

State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, China.

出版信息

Nat Commun. 2024 Nov 18;15(1):9983. doi: 10.1038/s41467-024-54205-1.

Abstract

Charge density wave (CDW) is the phenomenon of a material that undergoes a spontaneous lattice distortion and modulation of the electron density. Typically, the formation of CDW is attributed to Fermi surface nesting or electron-phonon coupling, where the CDW vector (Q) corresponds to localized extreme points of electronic susceptibility or imaginary phonon frequencies. Here, we propose a new family of multiple CDW orders, including chiral Star-of-David configuration in nine 2D III-VI van der Waals materials, backed by first-principles calculations. The distinct feature of this system is the presence of large and flat imaginary frequencies in the optical phonon branch across the Brillouin zone, which facilitates the formation of the diverse CDW phases. The electronic structures of 2D III-VI materials are relatively simple, with only III-s,p and VI-p orbitals contributing to the formation of the CDW order. Despite that, the CDW transitions involve both metal-to-insulator and insulator-to-insulator transitions, accompanied by a significant increase in the bandgap caused by an enhanced electronic localization. Our study not only reveals a new dimension in the family of 2D CDWs, but is also expected to offer deeper insights into the origins of the CDWs.

摘要

电荷密度波(CDW)是一种材料发生自发晶格畸变和电子密度调制的现象。通常,CDW的形成归因于费米面嵌套或电子-声子耦合,其中CDW矢量(Q)对应于电子极化率的局部极值点或虚声子频率。在此,我们通过第一性原理计算提出了一个新的多重CDW序家族,包括九种二维III-VI族范德华材料中的手性大卫之星构型。该系统的独特特征是在整个布里渊区的光学声子分支中存在大且平坦的虚频率,这有利于形成多样的CDW相。二维III-VI族材料的电子结构相对简单,只有III族的s、p轨道和VI族的p轨道参与CDW序的形成。尽管如此,CDW跃迁涉及金属-绝缘体和绝缘体-绝缘体跃迁,同时由于电子局域化增强导致带隙显著增加。我们的研究不仅揭示了二维CDW家族的一个新维度,还有望为CDW的起源提供更深入的见解。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b19c/11574180/f7aac23d517d/41467_2024_54205_Fig1_HTML.jpg

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