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多孔霍尔丹模型:拓扑相变与平带

Porous Haldane model: topological phase transitions and flat bands.

作者信息

Yang Fan, Ling Yi-Xuan, Yan Xu-Hui, Qi Lu, Zhang Xiuyun, Han Ying, He Ai-Lei

机构信息

College of Physics Science and Technology, Yangzhou University, Yangzhou 225002, People's Republic of China.

出版信息

J Phys Condens Matter. 2024 Dec 4;37(7). doi: 10.1088/1361-648X/ad9723.

Abstract

To investigate the influence of nanoholes on Chern insulators (CIs), we propose a porous Haldane model that considers the nearest-neighbor (NN) hoppings and next-NN (NNN) hoppings with staggered magnetic fluxes. This model supports multiple topological phases with different filling factors. At 2/5 filling, CI phases withC=±1, = 2,C=±3,C=±4and higher-order topological insulator (HOTI) appear. At 9/20 filling, CI withC=±1, = 2, = 3, and HOTI phases are obtained. At half-filling, this model exhibits CI withC=±1, = 2, andC=-3and HOTI phases. Unlike conventional HOTIs, these HOTI phases host gapless edge states and robust corner states which are characterized by a quantized quadrupole. Additionally, there is a topological flat band (TFB) with a flatness ratio about 13 with the NN and NNN hoppings. Based on the TFB model, we further investigate aν=1/2fractional CI state with hard-core bosons filling.

摘要

为了研究纳米孔对陈绝缘体(CI)的影响,我们提出了一种多孔霍尔丹模型,该模型考虑了具有交错磁通量的最近邻(NN)跳跃和次近邻(NNN)跳跃。该模型支持具有不同填充因子的多个拓扑相。在2/5填充时,出现了具有C = ±1、= 2、C = ±3、C = ±4的CI相和高阶拓扑绝缘体(HOTI)。在9/20填充时,得到了具有C = ±1、= 2、= 3的CI相和HOTI相。在半填充时,该模型呈现出具有C = ±1、= 2和C = -3的CI相以及HOTI相。与传统的HOTI不同,这些HOTI相具有无隙边缘态和以量子化四极矩为特征的稳健角态。此外,对于NN和NNN跳跃,存在一个平坦度比约为13的拓扑平坦带(TFB)。基于TFB模型,我们进一步研究了具有硬核玻色子填充的ν = 1/2分数CI态。

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