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用于实现高效近红外钙钛矿量子点发光二极管全配体覆盖的液态双齿配体

Liquid bidentate ligand for full ligand coverage towards efficient near-infrared perovskite quantum dot LEDs.

作者信息

Liu Zong-Shuo, Wang Ye, Zhao Feng, Li Hua-Hui, Liu Wei-Zhi, Shen Wan-Shan, Duan Hong-Wei, Wang Ya-Kun, Liao Liang-Sheng

机构信息

Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, China.

Macao Institute of Materials Science and Engineering, Macau University of Science and Technology, Macau SAR, Taipa, China.

出版信息

Light Sci Appl. 2025 Jan 7;14(1):35. doi: 10.1038/s41377-024-01704-x.

Abstract

Perovskite quantum dots (PQDs) show promise in light-emitting diodes (LEDs). However, near-infrared (NIR) LEDs employing PQDs exhibit inferior external quantum efficiency related to the PQD emitting in the visible range. One fundamental issue arises from the PQDs dynamic surface: the ligand loss and ions migration to the interfacial sites serve as quenching centers, resulting in trap-assisted recombination and carrier loss. In this work, we developed a chemical treatment strategy to eliminate the interface quenching sites and achieve high carrier utilization. We employ a bidentate and liquid agent (Formamidine thiocyanate, FASCN) with tight binding to suppress the ligand loss and the formation of interfacial quenching sites: the FASCN-treated films exhibit fourfold higher binding energy than the original oleate ligands. Furthermore, the short ligands (carbon chain <3) enable the treated films to show eightfold higher conductivity; and the liquid characteristics of FASCN avoid the use of high polar solvents and guarantee better passivation. The high conductivity ensures efficient charge transportation, enabling PQD-based NIR-LEDs to have a record-low voltage of 1.6 V at 776 nm. Furthermore, the champion EQE of the treated LEDs is ~23%: this is twofold higher than the control, and represents the highest among reported PQD-based NIR-LEDs.

摘要

钙钛矿量子点(PQDs)在发光二极管(LEDs)中展现出应用前景。然而,采用PQDs的近红外(NIR)LEDs的外量子效率低于在可见光范围内发光的PQDs。一个基本问题源于PQDs的动态表面:配体损失和离子迁移到界面位点充当猝灭中心,导致陷阱辅助复合和载流子损失。在这项工作中,我们开发了一种化学处理策略来消除界面猝灭位点并实现高载流子利用率。我们使用一种具有紧密结合作用的双齿液体试剂(硫氰酸甲脒,FASCN)来抑制配体损失和界面猝灭位点的形成:经FASCN处理的薄膜的结合能比原始油酸酯配体高四倍。此外,短配体(碳链<3)使处理后的薄膜的电导率提高八倍;并且FASCN的液体特性避免了使用高极性溶剂,并保证了更好的钝化效果。高电导率确保了有效的电荷传输,使基于PQD的近红外LED在776nm处具有创纪录的低电压1.6V。此外,经处理的LED的最佳外量子效率约为23%:这比对照高两倍,并且是已报道的基于PQD的近红外LED中最高的。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/076c/11704330/2eae5b27dff0/41377_2024_1704_Fig1_HTML.jpg

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