Zhu Congcong, Li Kun, Liu Xiaoxu, Li Yanpeng, Yin Jinghua, Hong Lu, Qin Qibing
School of Computer Engineering, Weifang University, Weifang 261061, China.
School of Material Science and Engineering, Shaanxi University of Science and Technology, Xi'an 710021, China.
Polymers (Basel). 2025 Jan 8;17(2):137. doi: 10.3390/polym17020137.
Polymeric dielectrics have garnered significant interest worldwide due to their excellent comprehensive performance. However, developing polymeric dielectric films with high permittivity () and breakdown strength () and low dielectric loss (tan) presents a huge challenge. In this study, amorphous aluminum oxide (AlO, AO) transition interfaces with nanoscale thickness were constructed between titanium oxide (TiO, TO) nanosheets and polyvinylidene fluoride (PVDF) to manufacture composites (PVDF/TO@AO). TO@AO nanosheets showed favorable dispersion in the polymer-based composites. Improved permittivity, suppressed dielectric loss, and enhanced breakdown strength were achieved by introducing AO coating with intermediate permittivity onto TO nanosheets to build a transition interface. The transition interface efficiently depressed the mobility of the charge carrier and electric conduction of the PVDF/TO@AO composites. As a result, the PVDF-based composite with 1 wt% TO@AO showed superior comprehensive performance, including high of ~12.7, low tan of ~0.017, and exceptional of ~357 kV/mm. This strategy supplies a novel paradigm for the application of fabricating dielectric films with excellent comprehensive performance.
聚合物电介质因其优异的综合性能而在全球范围内引起了广泛关注。然而,开发具有高介电常数()、击穿强度()和低介电损耗(tan)的聚合物介电薄膜面临着巨大挑战。在本研究中,在二氧化钛(TiO,TO)纳米片和聚偏氟乙烯(PVDF)之间构建了具有纳米级厚度的非晶氧化铝(AlO,AO)过渡界面,以制备复合材料(PVDF/TO@AO)。TO@AO纳米片在聚合物基复合材料中表现出良好的分散性。通过在TO纳米片上引入具有中等介电常数的AO涂层以构建过渡界面,实现了介电常数的提高、介电损耗的抑制和击穿强度的增强。该过渡界面有效地抑制了PVDF/TO@AO复合材料中载流子的迁移率和导电率。结果,含1 wt% TO@AO的PVDF基复合材料表现出优异的综合性能,包括高达12.7的高介电常数、低至0.017的低tan以及高达~357 kV/mm的出色击穿强度。该策略为制备具有优异综合性能的介电薄膜提供了一种新的范例。