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一种基于带有压控振荡器的忆阻器模拟器的全集成忆阻混沌电路。

A Fully Integrated Memristive Chaotic Circuit Based on Memristor Emulator with Voltage-Controlled Oscillator.

作者信息

Duan Zhikui, Chen Jiahui, He Shaobo, Yu Xinmei, Wang Qiang, Zhang Xin, Xiong Peng

机构信息

School of Electronic Information Engineering, Foshan University, Foshan 528225, China.

School of Automation and Electronic Information, Xiangtan University, Xiangtan 411105, China.

出版信息

Micromachines (Basel). 2025 Feb 21;16(3):246. doi: 10.3390/mi16030246.

DOI:10.3390/mi16030246
PMID:40141857
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11944079/
Abstract

This paper introduces a fully integrated memristive chaotic circuit, which is based on a voltage-controlled oscillator (VCO). The circuit employs a fully integrated architecture that offers reduced power consumption and a smaller footprint compared to the use of discrete components. Specifically, the VCO is utilized to generate the oscillatory signal, whereas the memristor emulator circuit serves as the nonlinear element. The memristor emulator circuit is constructed using a single operational transconductance amplifier (OTA), two transistors, and a grounded capacitor. This straightforward design contributes to diminished power usage within the chip's area. The VCO incorporates a dual delay unit and implements current compensation to enhance the oscillation frequency and to broaden the VCO's tunable range. Fabricated using the SMIC 180 nm CMOS process, this chaotic circuit occupies a mere 0.0072 mm of chip area, demonstrating a design that is both efficient and compact. Simulation outcomes indicate that the proposed memristor emulator is capable of operating at a maximum frequency of 300 MHz. The memristive chaotic circuit is able to produce a chaotic oscillatory signal with an operational frequency ranging from 158 MHz to 286 MHz, powered by a supply of 0.9 V, and with a peak power consumption of 3.5553 mW. The Lyapunov exponent of the time series within the resultant chaotic signal spans from 0.2572 to 0.4341.

摘要

本文介绍了一种基于压控振荡器(VCO)的全集成忆阻混沌电路。该电路采用全集成架构,与使用分立元件相比,具有降低功耗和更小尺寸的特点。具体而言,VCO用于产生振荡信号,而忆阻器仿真电路用作非线性元件。忆阻器仿真电路由一个单运算跨导放大器(OTA)、两个晶体管和一个接地电容构成。这种简单的设计有助于减少芯片面积内的功耗。VCO包含一个双延迟单元并实现电流补偿,以提高振荡频率并拓宽VCO的可调范围。该混沌电路采用中芯国际180 nm CMOS工艺制造,仅占用0.0072平方毫米的芯片面积,展现出高效且紧凑的设计。仿真结果表明,所提出的忆阻器仿真器能够在最高300 MHz的频率下工作。该忆阻混沌电路能够产生频率范围为158 MHz至286 MHz的混沌振荡信号,由一组0.9 V电源供电,峰值功耗为3.5553 mW。所得混沌信号内时间序列的李雅普诺夫指数范围为0.2572至0.4341。

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