Masoud Muhammad Faizan, Butt Sajid, Waseem Akram Muhammad, Naeem Nimra, Irfan Awais, Abbas Aumber, Irfan Syed
Department of Space Science, Institute of Space Technology Islamabad 44000 Pakistan
School of Materials Engineering, Jiangsu University of Technology Changzhou 213001 China.
RSC Adv. 2025 Mar 31;15(13):9854-9863. doi: 10.1039/d5ra00370a. eCollection 2025 Mar 28.
Copper selenide (CuSe) has been extensively studied due to its promising thermoelectric properties in bulk form. However, the miniaturization of thermoelectric devices using thin films is highly desired for smart applications. To date, there are few reports on composite thin films of CuSe for thermoelectric applications, primarily due to their lower conversion efficiency. In the present work, CuSe-based multiphase nanocomposites are presented to demonstrate enhanced conversion efficiency. The detailed structural characterization reveals that thermally evaporated Te-doped CuSe thin films have multiphase compositions. The electrical conductivity decreases after Te-doping, due to enormous scattering of carriers against secondary phases and lattice defects. However, upon further increasing Te-doping concentration, both the electrical conductivity and Seebeck coefficient start increasing simultaneously, due to the formation of CuTe nanoclusters and Te-Se solid solution, in the matrix of CuSe. We emphasize the power factor, with the highest value reaching 234.0 μW mK at 400 K, as a key indicator of thermoelectric performance. A slightly overestimated value of dimensionless figure-of-merit () of 0.2 was obtained using the power factor and merely the electronic part of the thermal conductivity. The current synthesis route synergizes the effects of a multiphase system in thin film research to enhance the thermoelectric efficiency of CuSe and related materials classes.
硒化铜(CuSe)因其块状形式具有良好的热电性能而受到广泛研究。然而,对于智能应用而言,非常需要使用薄膜的热电装置小型化。迄今为止,关于用于热电应用的CuSe复合薄膜的报道很少,主要是因为它们的转换效率较低。在本工作中,展示了基于CuSe的多相纳米复合材料以证明其提高的转换效率。详细的结构表征表明,热蒸发的Te掺杂CuSe薄膜具有多相组成。Te掺杂后电导率降低,这是由于载流子对第二相和晶格缺陷的大量散射。然而,随着Te掺杂浓度的进一步增加,电导率和塞贝克系数同时开始增加,这是由于在CuSe基体中形成了CuTe纳米团簇和Te-Se固溶体。我们强调功率因子,在400 K时其最高值达到234.0 μW mK,作为热电性能的关键指标。使用功率因子和仅热导率的电子部分获得了略微高估的无量纲品质因数()值0.2。当前的合成路线协同了薄膜研究中多相系统的效应,以提高CuSe及相关材料类别的热电效率。