Shi Zhenrong, Pan Ziwen, Li Qinghua, Li Wei
College of Mechanical and Vehicle Engineering, Changchun University, Changchun 130022, China.
Electronic Information Engineering College, Changchun University, Changchun 130022, China.
Sensors (Basel). 2025 Mar 20;25(6):1947. doi: 10.3390/s25061947.
With the development of chip technology, the demand for device reliability in various electronic chip industries continues to grow. In recent years, with the advancement of quantum sensors, the solid-state spin (nitrogen-vacancy) NV center temperature measurement system has garnered attention due to its high sensitivity and spatial range. However, NV centers are not only affected by temperature but also by magnetic fields. This article analyzes the impact of magnetic fields on temperature detection. By combining the wide-field imaging platform of optically detected magnetic resonance (ODMR) with a temperature-sensitive structure of thin ensemble diamond overlaid on a quartz substrate, high-sensitivity temperature detection has been achieved. And obtains a sensitivity of approximately 10 mK/Hz. By combining a CCD camera imaging system, it realizes a wide field of view of 500 μm, a high spatial resolution of 1.3 μm. Ultimately, this study demonstrates the two-dimensional actual temperature distribution on the chip surface under different currents, achieving wide-field, non-contact, high-speed temperature imaging of the chip surface.
随着芯片技术的发展,各电子芯片行业对器件可靠性的需求持续增长。近年来,随着量子传感器的进步,固态自旋(氮空位)NV中心温度测量系统因其高灵敏度和空间范围而受到关注。然而,NV中心不仅受温度影响,还受磁场影响。本文分析了磁场对温度检测的影响。通过将光探测磁共振(ODMR)的宽场成像平台与覆盖在石英衬底上的薄集合金刚石的温度敏感结构相结合,实现了高灵敏度温度检测。并获得了约10 mK/Hz的灵敏度。通过结合CCD相机成像系统,实现了500μm的宽视野、1.3μm的高空间分辨率。最终,本研究展示了不同电流下芯片表面的二维实际温度分布,实现了芯片表面的宽场、非接触、高速温度成像。