Lang Lucas, Fiorucci Letizia, Parigi Giacomo, Luchinat Claudio, Ravera Enrico
Theoretische Chemie/Quantenchemie, Institut für Chemie, Technische Universität Berlin, Sekr. C7, Straße des 17. Juni 135, 10623 Berlin, Germany.
Department of Chemistry "Ugo Schiff" and Magnetic Resonance Center (CERM), University of Florence, 50019 Florence, Italy.
J Chem Theory Comput. 2025 Jun 10;21(11):5642-5660. doi: 10.1021/acs.jctc.5c00433. Epub 2025 May 27.
NMR chemical shifts depend on the applied magnetic flux density, and this becomes more and more important as stronger and stronger magnetic fields are becoming available. Herein we develop a theory of the field dependence of NMR shifts of paramagnetic molecules in solution. Our derivation leads to two distinct approaches: a finite-field approach that describes the shift up to infinite order in the applied field but requires numerical integration for the orientational average, and a second-order approach that is valid up to second order in . In this latter approach, the orientational average can be performed analytically, and the field dependence cleanly separates into two additive terms: the well-known "indirect" field dependence due to incomplete averaging in solution and the "direct" field dependence due to the nonlinear response to the external field. In analogy to the diamagnetic case, the direct field dependence involves a fourth-order tensor whose elements are fourth derivatives of the electronic Helmholtz free energy. Generalizing the Van den Heuvel-Soncini equation, we provide analytical sum-over-states equations for these higher-order derivatives. Using the NiSAL-HDPT complex as an example, we demonstrate the applicability of the second-order approach at room temperature and the highest commercially available field strength and show that it agrees well with the field dependence measured experimentally.
核磁共振化学位移取决于所施加的磁通密度,随着可获得的磁场强度越来越高,这一点变得越来越重要。在此,我们发展了一种关于溶液中顺磁分子核磁共振位移的场依赖性理论。我们的推导得出了两种不同的方法:一种是有限场方法,它描述了在施加场中直至无穷阶的位移,但需要对取向平均进行数值积分;另一种是二阶方法,它在 中有效至二阶。在后一种方法中,可以解析地进行取向平均,并且场依赖性可以清晰地分离为两个相加项:由于溶液中不完全平均导致的众所周知的“间接”场依赖性和由于对外部场的非线性响应导致的“直接”场依赖性。类似于抗磁情况,直接场依赖性涉及一个四阶张量,其元素是电子亥姆霍兹自由能的四阶导数。推广范登赫维尔 - 索尼奇尼方程,我们为这些高阶导数提供了解析的态求和方程。以NiSAL - HDPT配合物为例,我们证明了二阶方法在室温及最高商业可用场强下的适用性,并表明它与实验测量的场依赖性吻合良好。