He Xiangwei, Xu Jianping, Shi Shaobo, Kong Lina, Zhang Xiaosong, Li Lan
Tianjin Key Laboratory of Quantum Optics and Intelligent Photonics, School of Science, Tianjin University of Technology, Tianjin 300384, China.
School of Science, Tianjin University of Technology and Education, Tianjin 300222, China.
ACS Appl Mater Interfaces. 2025 Jun 18;17(24):36192-36202. doi: 10.1021/acsami.5c06657. Epub 2025 Jun 5.
The technology for photodetection and localization of corona discharge typically necessitates the integration of various photodetectors (PDs) with different photoresponse bands and relies on external power supplies. A self-powered PD was fabricated utilizing the SbSe/GaO heterojunction, exhibiting a broadband photoresponse from solar-blind ultraviolet (SBUV) to visible (Vis) and near-infrared (NIR) bands. The surface states of GaO nanorod array (NR) films were modulated by treatment with hydrogen peroxide (HO) solution for different periods of time to suppress the interface recombination of photogenerated carriers in type-I heterojunctions. The HO treatment resulted in increased hydroxyl groups (-OH) and decreased oxygen vacancies in GaO NRs. The -OH can facilitate oxygen molecule (O) adsorption in GaO NRs and form O to consume photogenerated holes to reduce the recombination of photogenerated carriers. However, the decrease of oxygen vacancies will cause a decline in the concentration of electrons in GaO NRs to hinder the carrier transport. Ultimately, the optimized Al/SbSe/GaO/FTO PD, subjected to HO treatment for 4 min, demonstrated responsivities of 3.3, 130, and 180 mA/W under 254, 525, and 850 nm light illumination without applying a bias voltage, respectively. The utilization of oxygen adsorption and desorption processes to regulate the recombination of photogenerated carriers at the interface is an effective strategy for improving the performance of I-type heterojunction self-powered PDs. An approach was conceptually proposed for all-day real-time corona discharge monitoring in high-voltage transmission lines by utilizing the broadband photoresponse characteristic of PDs. The SBUV photoresponse was applied for the capture of SBUV light signals generated by corona discharge. The photoresponse in Vis and NIR light bands was employed to provide background information on corona discharge in both strong light conditions during daytime and weak light conditions during nighttime. The results provide a low power and miniaturized solution for the digitalization of the Power Internet of Things (IoT) and enable real-time monitoring of high-voltage transmission lines.
电晕放电的光电探测和定位技术通常需要将具有不同光响应波段的各种光电探测器(PD)集成在一起,并依赖外部电源。利用SbSe/GaO异质结制备了一种自供电的PD,其表现出从日盲紫外(SBUV)到可见光(Vis)和近红外(NIR)波段的宽带光响应。通过用不同时间的过氧化氢(HO)溶液处理来调制GaO纳米棒阵列(NR)薄膜的表面态,以抑制I型异质结中光生载流子的界面复合。HO处理导致GaO NRs中羟基(-OH)增加,氧空位减少。-OH可以促进GaO NRs中氧分子(O)的吸附并形成O以消耗光生空穴,从而减少光生载流子的复合。然而,氧空位的减少会导致GaO NRs中电子浓度下降,从而阻碍载流子传输。最终,经过4分钟HO处理的优化Al/SbSe/GaO/FTO PD在254、525和850 nm光照下,在不施加偏置电压的情况下,响应度分别为3.3、130和180 mA/W。利用氧吸附和解吸过程来调节界面处光生载流子的复合是提高I型异质结自供电PD性能的有效策略。通过利用PD的宽带光响应特性,从概念上提出了一种用于高压输电线路全天实时电晕放电监测的方法。SBUV光响应用于捕获电晕放电产生的SBUV光信号。Vis和NIR光波段的光响应用于提供白天强光条件和夜间弱光条件下电晕放电的背景信息。这些结果为物联网(IoT)的数字化提供了一种低功耗和小型化的解决方案,并能够对高压输电线路进行实时监测。