Xu Da, Liu Qiushi, Liang Boqun, Yu Ning, Ma Xuezhi, Xu Yaodong, Taniguchi Takashi, Ding Charlie, Lake Roger K, Yan Ruoxue, Liu Ming
Department of Electrical and Computer Engineering, University of California, Riverside, Riverside, CA 92521, USA.
Department of Chemical and Environmental Engineering, University of California, Riverside, Riverside, CA 92521, USA.
Sci Adv. 2025 Aug;11(31):eadv7614. doi: 10.1126/sciadv.adv7614. Epub 2025 Jul 30.
Integrated photodetectors are vital for their high speed, sensitivity, and low power consumption, with photocurrent driven by the photovoltaic and photothermoelectric (PTE) effects. At the nanoscale, these mechanisms overlap, complicating their separate evaluation. We introduce a 3D photocurrent nanoimaging technique to map these effects in a MoS-Au Schottky photodiode, revealing a PTE-dominated region extending hundreds of nanometers from the electrode edge, enabled by weak electrostatic forces in two-dimensional materials. Unexpectedly, adding high-thermal conductivity hexagonal boron nitride enhances the PTE response by laterally redirecting heat, aligning thermal gradients with Seebeck coefficient variations, and boosting local conductance. This technique advances optoelectronic applications and deepens insights into light-matter interactions in low-dimensional systems, offering a powerful tool for designing efficient nanoscale photodetectors.
集成光电探测器因其高速、高灵敏度和低功耗而至关重要,其光电流由光伏效应和光热发电(PTE)效应驱动。在纳米尺度上,这些机制相互重叠,使得对它们进行单独评估变得复杂。我们引入了一种三维光电流纳米成像技术,以绘制MoS-Au肖特基光电二极管中的这些效应,揭示了一个从电极边缘延伸数百纳米的以PTE为主的区域,这是由二维材料中的弱静电力实现的。出乎意料的是,添加高导热率的六方氮化硼通过横向重新引导热量、使热梯度与塞贝克系数变化对齐以及提高局部电导率来增强PTE响应。这项技术推动了光电子应用的发展,并加深了对低维系统中光与物质相互作用的理解,为设计高效的纳米级光电探测器提供了一个强大的工具。