含砷二元化合物半导体砷化镓和砷化铟对仓鼠的睾丸毒性评估。

Testicular toxicity evaluation of arsenic-containing binary compound semiconductors, gallium arsenide and indium arsenide, in hamsters.

作者信息

Omura M, Hirata M, Tanaka A, Zhao M, Makita Y, Inoue N, Gotoh K, Ishinishi N

机构信息

Department of Hygiene, Faculty of Medicine, Kyushu University, Fukuoka, Japan.

出版信息

Toxicol Lett. 1996 Dec 16;89(2):123-9. doi: 10.1016/s0378-4274(96)03796-4.

DOI:10.1016/s0378-4274(96)03796-4

PMID:8960154

Abstract

The testicular toxicities of gallium arsenide (GaAs), indium arsenide (InAs) and arsenic trioxide (As2O3) were examined by repetitive intratracheal instillation using hamsters. GaAs (7.7 mg/kg) and As2O3 (1.3 mg/kg) were instilled twice a week a total of 16 times and InAs (7.7 mg/kg) was instilled a total of 14 times. GaAs caused testicular spermatid retention and epididymal sperm reduction, though the degrees were less severe than those in rats shown in our previous experiment. InAs and As2O3 did not show any testicular toxicities. Serum arsenic concentration in GaAs-treated hamsters was less than half of that in As2O3-treated hamsters in which no testicular toxicities were found. Serum molar concentration of gallium was 32-times higher than that of arsenic in GaAs-treated hamsters. Therefore gallium may play a main role in the testicular toxicity of GaAs in hamsters.

摘要

通过对仓鼠进行重复气管内滴注，研究了砷化镓（GaAs）、砷化铟（InAs）和三氧化二砷（As2O3）的睾丸毒性。每周两次向仓鼠滴注GaAs（7.7毫克/千克）和As2O3（1.3毫克/千克），共滴注16次；向仓鼠滴注InAs（7.7毫克/千克），共滴注14次。GaAs导致睾丸精子细胞滞留和附睾精子数量减少，尽管其程度不如我们之前实验中在大鼠身上观察到的严重。InAs和As2O3未表现出任何睾丸毒性。接受GaAs处理的仓鼠血清砷浓度不到未发现睾丸毒性的As2O3处理仓鼠血清砷浓度的一半。在接受GaAs处理的仓鼠中，血清镓摩尔浓度比砷高32倍。因此，镓可能在仓鼠中GaAs的睾丸毒性中起主要作用。