高频传入刺激可诱导腹侧被盖区场电位的长时程增强。

High-frequency afferent stimulation induces long-term potentiation of field potentials in the ventral tegmental area.

作者信息

Nugent Fereshteh S, Hwong Alison R, Udaka Yoko, Kauer Julie A

机构信息

Department of Molecular Pharmacology, Physiology and Biotechnology, Brown University, Providence, RI 02912, USA.

出版信息

Neuropsychopharmacology. 2008 Jun;33(7):1704-12. doi: 10.1038/sj.npp.1301561. Epub 2007 Sep 12.

Abstract

Excitatory synapses on dopamine neurons in the VTA can undergo both long-term potentiation and depression. Additionally, drug-induced plasticity has been found at VTA synapses, and is proposed to play a role in reward-related learning and addiction by modifying dopamine cell firing. LTP at these synapses is difficult to generate experimentally in that it requires an undisturbed intracellular milieu and is often small in magnitude. Here, we demonstrate the induction of LTP as a property of evoked field potentials within the VTA. Excitatory field potentials were recorded extracellularly from VTA neurons in acute horizontal midbrain slices. Using extracellular and intracellular recording techniques, we found that evoked field potentials originate within the VTA itself and are largely composed of AMPA receptor-mediated EPSPs and action potentials triggered by activation of glutamatergic synapses on both dopamine and GABA neurons. High-frequency afferent stimulation (HFS) induced LTP of the field potential. The induction of this LTP was blocked by application of the NMDAR antagonist, d-APV, prior to HFS. As reported previously, glutamatergic synapses on GABA neurons did not express LTP while those on dopamine neurons did. We conclude that the potentiation of glutamatergic synapses on dopamine neurons is a major contributor to NMDA receptor-dependent LTP of the field potential. Field potential recordings may provide a convenient approach to explore the basic electrophysiological properties of VTA neurons and the development of addiction-related processes in this brain region.

摘要

腹侧被盖区(VTA)多巴胺能神经元上的兴奋性突触可经历长时程增强(LTP)和长时程抑制(LTD)。此外,已发现在VTA突触处存在药物诱导的可塑性,并提出其通过改变多巴胺能细胞的放电在奖赏相关学习和成瘾中发挥作用。在这些突触处诱导LTP在实验上很困难,因为这需要一个不受干扰的细胞内环境,而且其幅度通常较小。在此,我们证明了LTP的诱导是VTA内诱发场电位的一种特性。在急性水平中脑切片中,从VTA神经元细胞外记录兴奋性场电位。使用细胞外和细胞内记录技术,我们发现诱发场电位起源于VTA本身,并且在很大程度上由AMPA受体介导的兴奋性突触后电位(EPSP)和由多巴胺能神经元和γ-氨基丁酸(GABA)能神经元上的谷氨酸能突触激活触发的动作电位组成。高频传入刺激(HFS)诱导了场电位的LTP。在HFS之前应用N-甲基-D-天冬氨酸受体(NMDAR)拮抗剂d-APV可阻断这种LTP的诱导。如先前报道,GABA能神经元上的谷氨酸能突触不表达LTP,而多巴胺能神经元上的则表达。我们得出结论,多巴胺能神经元上谷氨酸能突触的增强是场电位NMDA受体依赖性LTP的主要促成因素。场电位记录可能为探索VTA神经元的基本电生理特性以及该脑区成瘾相关过程的发展提供一种便捷的方法。

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