Loisel B, Arakawa E T
Appl Opt. 1980 Jun 15;19(12):1959-62. doi: 10.1364/AO.19.001959.
Alloy formation in Au-Al thin films has been studied by the attenuated total reflection (ATR) method in the 64-80 degrees C temperature range. In this optical method, the coupling of incoming light with a surface plasmon at the metal-dielectric interface appears as a sharp minimum in the reflectance spectrum of p-polarized light. The angular position of this minimum is very sensitive to the optical constants of the metal near the interface. This makes the method suitable for studies of diffusion in metals. In the presence of unreacted aluminum, the energy of activation for the growth of Au(2)Al is found to equal 22.9 kcal/mole.
通过衰减全反射(ATR)方法在64 - 80摄氏度温度范围内研究了金铝薄膜中的合金形成。在这种光学方法中,入射光与金属 - 电介质界面处的表面等离子体的耦合表现为p偏振光反射光谱中的一个尖锐最小值。这个最小值的角位置对界面附近金属的光学常数非常敏感。这使得该方法适用于研究金属中的扩散。在存在未反应铝的情况下,发现Au₂Al生长的活化能等于22.9千卡/摩尔。