基于聚合物带上的钴/镍合成反铁磁体的薄膜异质结构:迈向可持续的柔性自旋电子学。

Thin-Film Heterostructures Based on Co/Ni Synthetic Antiferromagnets on Polymer Tapes: Toward Sustainable Flexible Spintronics.

作者信息

Hassan Mariam, Laureti Sara, Rinaldi Christian, Fagiani Federico, Barucca Gianni, Casoli Francesca, Mezzi Alessio, Bolli Eleonora, Kaciulis Saulius, Fix Mario, Ullrich Aladin, Albrecht Manfred, Varvaro Gaspare

机构信息

ISM-CNR, nM2-Lab, Area della Ricerca Roma 1, Monterotondo Scalo (Roma)00015, Italy.

Institute of Physics, University of Augsburg, Universitätsstraße 1 Nord, D-86159Augsburg, Germany.

出版信息

ACS Appl Mater Interfaces. 2022 Nov 16;14(45):51496-51509. doi: 10.1021/acsami.2c14000. Epub 2022 Nov 1.

Abstract

Synthetic antiferromagnets with perpendicular magnetic anisotropy (PMA-SAFs) have gained growing attention for both conventional and next-generation spin-based technologies. While the progress of PMA-SAF spintronic devices on rigid substrates has been remarkable, only few examples of flexible thin-film heterostructures are reported in the literature, all containing platinum group metals (PGMs). Systems based on Co/Ni may offer additional advantages with respect to devices containing PGMs, i.e., low damping and high spin polarization. Moreover, limiting the use of PGMs may relieve the demand for critical raw materials and reduce the environmental impact of related technologies, thus contributing to the transition toward a more sustainable future. Here, we discuss for the first time the realization of Co/Ni-based PMA-SAFs on polymer tapes and exploit it to obtain flexible giant magneto-resistive spin valves (GMR-SVs) with perpendicular magnetic anisotropy. Several combinations of buffer and capping layers (i.e., Pt, Pd, and Cu/Ta) are also investigated. High-quality flexible SAFs with a fully compensated antiferromagnetic region and SVs with a sizable GMR ratio (up to 4.4%), in line with the values reported in the literature for similar systems on rigid substrates, were obtained in all cases. However, we demonstrate that PGMs allows achieving the best results when used as a buffer layer, while Cu is the best choice as a capping layer to optimize the properties of the stacks. We justify the role of buffer and capping layers in terms of different interdiffusion mechanisms occurring at the interface between the metallic layers. These results, along with the high robustness of the samples' properties against bending (up to 180°), indicate that complex and bendable Co/Ni-based heterostructures with reduced content of PGMs can be obtained on flexible tapes, allowing for the development of novel flexible and sustainable spintronic devices for applications in many fields including wearable electronics, soft robotics, and biomedicine.

摘要

具有垂直磁各向异性的合成反铁磁体(PMA-SAFs)在传统和下一代基于自旋的技术中都受到了越来越多的关注。虽然PMA-SAF自旋电子器件在刚性衬底上取得了显著进展,但文献中报道的柔性薄膜异质结构实例很少,且均含有铂族金属(PGMs)。基于Co/Ni的系统相对于含PGMs的器件可能具有额外的优势,即低阻尼和高自旋极化率。此外,限制PGMs的使用可能会缓解对关键原材料的需求,并减少相关技术对环境的影响,从而有助于向更可持续的未来过渡。在此,我们首次讨论了在聚合物带上实现基于Co/Ni 的PMA-SAFs,并利用它获得了具有垂直磁各向异性的柔性巨磁阻自旋阀(GMR-SVs)。还研究了缓冲层和覆盖层的几种组合(即Pt、Pd和Cu/Ta)。在所有情况下,均获得了具有完全补偿反铁磁区域的高质量柔性SAFs以及具有相当大GMR比率(高达4.4%)的SVs,这与文献中报道的刚性衬底上类似系统的值一致。然而,我们证明,当用作缓冲层时,PGMs能取得最佳效果,而Cu是优化堆叠结构性能的最佳覆盖层选择。我们根据金属层之间界面处发生的不同互扩散机制来解释缓冲层和覆盖层的作用。这些结果,连同样品性能对弯曲(高达180°)的高稳健性,表明可以在柔性带上获得具有减少PGMs含量的复杂且可弯曲的基于Co/Ni的异质结构,从而能够开发用于包括可穿戴电子、软机器人和生物医学在内的许多领域的新型柔性和可持续自旋电子器件。

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