Department of ECE, Haldia Institute of Technology, Haldia 721657, India.
School of Electronics Engineering, KIIT University, Bhubaneswar 751024, India.
Sensors (Basel). 2023 Mar 8;23(6):2953. doi: 10.3390/s23062953.
In this article, the performance of n-type junctionless (JL) double-gate (DG) MOSFET-based biosensors with and without gate stack (GS) has been studied. Here, the dielectric modulation (DM) method is applied to detect biomolecules in the cavity. The sensitivity of n-type JL-DM-DG-MOSFET and n-type JL-DM-GSDG-MOSFET-based biosensors have also been evaluated. The sensitivity (ΔV) improved in JL-DM-GSDG MOSFET/JL-DM-DG-MOSFET-based biosensors for neutral/charged biomolecules is 116.66%/66.66% and 1165.78%/978.94%, respectively, compared with the previously reported results. The electrical detection of biomolecules is validated using the ATLAS device simulator. The noise and analog/RF parameters are compared between both biosensors. A lower threshold voltage is observed in the GSDG-MOSFET-based biosensor. The I/I ratio is higher for DG-MOSFET-based biosensors. The proposed GSDG-MOSFET-based biosensor demonstrates higher sensitivity than the DG-MOSFET-based biosensor. The GSDG-MOSFET-based biosensor is suitable for low-power, high-speed, and high sensitivity applications.
本文研究了具有和不具有栅堆栈 (GS) 的 n 型结型无限制 (JL) 双栅 (DG) MOSFET 生物传感器的性能。这里,应用介电调制 (DM) 方法来检测腔体内的生物分子。还评估了基于 n 型 JL-DM-DG-MOSFET 和 n 型 JL-DM-GSDG-MOSFET 的生物传感器的灵敏度。与之前的报告结果相比,中性/带电生物分子在 JL-DM-GSDG MOSFET/JL-DM-DG-MOSFET 生物传感器中的灵敏度(ΔV)提高了 116.66%/66.66%和 1165.78%/978.94%。使用 ATLAS 器件模拟器验证了生物分子的电检测。比较了两种生物传感器的噪声和模拟/RF 参数。在基于 GSDG-MOSFET 的生物传感器中观察到较低的阈值电压。基于 DG-MOSFET 的生物传感器的 I/I 比更高。与基于 DG-MOSFET 的生物传感器相比,所提出的基于 GSDG-MOSFET 的生物传感器具有更高的灵敏度。基于 GSDG-MOSFET 的生物传感器适用于低功率、高速和高灵敏度应用。