Binnie A, Olson S, Wu G E, Lewis S M
Department of Immunology, University of Toronto, Ontario, Canada.
J Immunol. 1999 Nov 15;163(10):5418-26.
SCID mice have a defect in the catalytic subunit of the DNA-dependent protein kinase, causing increased sensitivity to ionizing radiation in all tissues and severely limiting the development of B and T cell lineages. SCID T and B cell precursors are unable to undergo normal V(D)J recombination: coding joint and signal joint products are less frequently formed and often will exhibit abnormal structural features. Paradoxically, irradiation of newborn SCID mice effects a limited rescue of T cell development. It is not known whether irradiation has a direct impact on the process of V(D)J joining, or whether irradiation of the thymus allows the outgrowth of rare recombinants. To investigate this issue, we sought to demonstrate an irradiation effect ex vivo. Here we have been able to reproducibly detect low-frequency coding joint products with V(D)J recombination reporter plasmids introduced into SCID cell lines. Exposure of B and T lineage cells to 100 cGy of gamma irradiation made no significant difference with respect to the number of coding joint and signal joint recombination products. However, in the absence of irradiation, the coding joints produced in SCID cells had high levels of P nucleotide insertion. With irradiation, markedly fewer P insertions were seen. The effect on coding joint structure is evident in a transient assay, in cultured cells, establishing that irradiation has an immediate impact on the process of V(D)J recombination. A specific proposal for how the DNA-dependent protein kinase catalytic subunit influences the opening of hairpin DNA intermediates during coding joint formation in V(D)J recombination is presented.
重症联合免疫缺陷(SCID)小鼠的DNA依赖性蛋白激酶催化亚基存在缺陷,导致所有组织对电离辐射的敏感性增加,并严重限制了B和T细胞谱系的发育。SCID T和B细胞前体无法进行正常的V(D)J重组:编码接头和信号接头产物形成频率较低,且常常呈现异常的结构特征。矛盾的是,对新生SCID小鼠进行辐射可对T细胞发育产生有限的挽救作用。目前尚不清楚辐射是否对V(D)J连接过程有直接影响,或者胸腺辐射是否能使罕见重组体生长。为了研究这个问题,我们试图在体外证明辐射效应。在这里,我们能够通过将V(D)J重组报告质粒引入SCID细胞系,可重复地检测到低频编码接头产物。将B和T谱系细胞暴露于100 cGy的γ辐射下,编码接头和信号接头重组产物的数量没有显著差异。然而,在没有辐射的情况下,SCID细胞中产生的编码接头有高水平的P核苷酸插入。经过辐射后,可见明显较少的P插入。在培养细胞的瞬时试验中,对编码接头结构的影响很明显,这表明辐射对V(D)J重组过程有直接影响。本文提出了一个关于DNA依赖性蛋白激酶催化亚基如何在V(D)J重组的编码接头形成过程中影响发夹DNA中间体开放的具体假说。