Richard O, Lemee N, Guilloux-Viry M, Perrin A
EMAT, University of Antwerp (RUCA), Belgium.
J Electron Microsc (Tokyo). 2000;49(3):493-501. doi: 10.1093/oxfordjournals.jmicro.a023834.
Cu(x)Mo6S8 Chevrel phase thin films epitaxially grown on R-plane sapphire substrates have been studied using field emission scanning electron microscopy (FE-SEM) and high-resolution transmission electron microscopy (HREM). For samples grown in optimal conditions, the SEM images evidence oriented grains of about 100 nm average size; the HREM images of cross-section samples allow to deduce the local epitaxial relations between the substrates and films. HREM also evidences two grain families, previously deduced from X-ray and reflection high-energy electron diffraction studies. No defects have been observed in the films; a higher molybdenum content in the films results in Mo-precipitation at the film-substrate interface.