Alexandro I, Papworth A J, Rafferty B, Kiely C J, Brown L M
Department of Engineering, Cambridge University, UK.
Ultramicroscopy. 2001 Nov;90(1):39-45. doi: 10.1016/s0304-3991(01)00123-1.
The detailed understanding of the electronic properties of carbon-based materials requires the determination of their electronic structure and more precisely the calculation of their joint density of states (JDOS) and dielectric constant. Low electron energy loss spectroscopy (EELS) provides a continuous spectrum which represents all the excitations of the electrons within the material with energies ranging between zero and about 100 eV. Therefore, EELS is potentially more powerful than conventional optical spectroscopy which has an intrinsic upper information limit of about 6 eV due to absorption of light from the optical components of the system or the ambient. However, when analysing EELS data, the extraction of the single scattered data needed for Kramers Kronig calculations is subject to the deconvolution of the zero loss peak from the raw data. This procedure is particularly critical when attempting to study the near-bandgap region of materials with a bandgap below 1.5 eV. In this paper, we have calculated the electronic properties of three widely studied carbon materials; namely amorphous carbon (a-C), tetrahedral amorphous carbon (ta-C) and C60 fullerite crystal. The JDOS curve starts from zero for energy values below the bandgap and then starts to rise with a rate depending on whether the material has a direct or an indirect bandgap. Extrapolating a fit to the data immediately above the bandgap in the stronger energy loss region was used to get an accurate value for the bandgap energy and to determine whether the bandgap is direct or indirect in character. Particular problems relating to the extraction of the single scattered data for these materials are also addressed. The ta-C and C60 fullerite materials are found to be direct bandgap-like semiconductors having a bandgaps of 2.63 and 1.59eV, respectively. On the other hand, the electronic structure of a-C was unobtainable because it had such a small bandgap that most of the information is contained in the first 1.2 eV of the spectrum, which is a region removed during the zero loss deconvolution.
要详细了解碳基材料的电子特性,需要确定其电子结构,更确切地说是计算其联合态密度(JDOS)和介电常数。低能电子能量损失谱(EELS)提供了一个连续光谱,它代表了材料内部能量在零到约100电子伏特之间的所有电子激发。因此,EELS可能比传统光学光谱更强大,传统光学光谱由于系统光学组件或环境对光的吸收,其固有信息上限约为6电子伏特。然而,在分析EELS数据时,Kramers Kronig计算所需的单次散射数据的提取需要从原始数据中对零损失峰进行去卷积。当试图研究带隙低于1.5电子伏特的材料的近带隙区域时,这个过程尤为关键。在本文中,我们计算了三种广泛研究的碳材料的电子特性;即非晶碳(a-C)、四面体非晶碳(ta-C)和C60富勒烯晶体。JDOS曲线在带隙以下的能量值处从零开始,然后开始上升,上升速率取决于材料是直接带隙还是间接带隙。在较强能量损失区域对带隙上方紧邻的数据进行拟合外推,以获得带隙能量的准确值,并确定带隙是直接带隙还是间接带隙。还讨论了与这些材料单次散射数据提取相关的特殊问题。发现ta-C和C60富勒烯材料是类直接带隙半导体,其带隙分别为2.63和1.59电子伏特。另一方面,a-C的电子结构无法获得,因为它的带隙非常小,大部分信息都包含在光谱的前1.2电子伏特区域,而这是在零损失去卷积过程中被去除的区域。