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Hydrogen adsorption on the indium-rich indium phosphide (001) surface: a novel way to produce bridging In-H-In bonds.

作者信息

Raghavachari K, Fu Q, Chen G, Li L, Li C H, Law D C, Hicks R F

机构信息

Chemical Engineering Department, University of California, Los Angeles, CA 90095, USA.

出版信息

J Am Chem Soc. 2002 Dec 18;124(50):15119-24. doi: 10.1021/ja020348p.

Abstract

The indium phosphide (001) surface provides a unique chemical environment for studying the reactivity of hydrogen toward the electron-deficient group IIIA element, indium. Hydrogen adsorption on the In-rich delta(2 x 4) reconstruction produced a neutral, covalently bound bridging indium hydride. Using vibrational spectroscopy and ab initio cluster calculations, two types of bridging hydrides were identified, a (mu-H)In(2) and a (mu-H)(2)In(3) "butterfly-like" structure. These structures were formed owing to the large thermodynamic driving force for adsorption of H atoms on solid-state indium dimers.

摘要

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