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色散声子线宽:ZnO的E2声子

Dispersive phonon linewidths: the E2 phonons of ZnO.

作者信息

Serrano J, Manjón F J, Romero A H, Widulle F, Lauck R, Cardona M

机构信息

Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, 70569 Stuttgart, Germany.

出版信息

Phys Rev Lett. 2003 Feb 7;90(5):055510. doi: 10.1103/PhysRevLett.90.055510.

Abstract

Phonon linewidths can exhibit a large variation when either pressure or isotopic masses are changed. These effects yield detailed information about the mechanisms responsible for linewidths and lifetimes, e.g., anharmonicity or isotopic disorder. We report Raman measurements of the linewidth of the upper E2 phonons of ZnO crystals with several isotopic compositions and their dependence on pressure. Changes by a factor of 12 are observed at a given temperature. Comparison with calculated densities of one-phonon states, responsible for isotope scattering, and of two-phonon states, responsible for anharmonic decay, yields a consistent picture of these phenomena. Isotopic disorder broadening by 7 cm(-1) is found in samples with mixed 16O-18O content, whereas the anharmonic processes involve decay into sums and differences of two phonons.

摘要

当压力或同位素质量发生变化时,声子线宽会呈现出很大的变化。这些效应产生了关于导致线宽和寿命的机制的详细信息,例如非谐性或同位素无序。我们报告了对几种同位素组成的ZnO晶体的上E2声子线宽的拉曼测量及其对压力的依赖性。在给定温度下观察到变化因子为12的情况。将其与计算得到的负责同位素散射的单声子态密度以及负责非谐衰减的两声子态密度进行比较,得出了这些现象的一致图景。在含有混合的16O - 18O的样品中发现同位素无序加宽了7 cm(-1),而非谐过程涉及到衰变成两个声子的和与差。

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