Beer Leanne, Britten James F, Brusso Jaclyn L, Cordes A Wallace, Haddon Robert C, Itkis Mikhail E, MacGregor Douglas S, Oakley Richard T, Reed Robert W, Robertson Craig M
Department of Chemistry, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada.
J Am Chem Soc. 2003 Nov 26;125(47):14394-403. doi: 10.1021/ja0371350.
New synthetic routes to 1,2,3-dithiazolo-1,2,3-dithiazolylium salts, based on double Herz condensations of N-alkylated 2,6-diaminopyridinium salts with sulfur monochloride, have been developed. The two prototypal 1,2,3-dithiazolo-1,2,3-dithiazolyl radicals HBPMe and HBPEt have been prepared and characterized in solution by cyclic voltammetry and EPR spectroscopy. Measured electrochemical cell potentials and computed (B3LYP/6-31G) gas-phase disproportionation enthalpies favor a low on-site Coulombic repulsion energy U in the solid state. The crystal structures of HBPR (R = Me, Et) have been determined by X-ray crystallography (at 293 K). Both consist of slipped pi-stacks of undimerized radicals, with many close intermolecular S- - -S contacts. Magnetic, conductivity, and optical measurements have been performed and the results interpreted in light of extended Hückel band calculations. The crystalline materials are paramagnetic above 100 K, with room-temperature conductivities sigma(RT) of 10(-5)-10(-6) S cm(-1); the slightly greater conductivity of the R = Et compound can be associated with a more well developed band structure. We suggest a Mott-Hubbard insulator ground state for these materials, with an on-site Coulomb repulsion energy U of about 1.0 eV.
基于N-烷基化2,6-二氨基吡啶鎓盐与一氯化硫的双赫茨缩合反应,已开发出合成1,2,3-二噻唑并-1,2,3-二噻唑鎓盐的新路线。制备了两个原型1,2,3-二噻唑并-1,2,3-二噻唑基自由基HBPMe和HBPEt,并通过循环伏安法和电子顺磁共振光谱在溶液中对其进行了表征。测量的电化学电池电位和计算(B3LYP/6-31G)的气相歧化焓有利于固态下较低的在位库仑排斥能U。通过X射线晶体学(在293K)确定了HBPR(R = Me,Et)的晶体结构。两者均由未二聚化自由基的滑移π堆积组成,具有许多紧密的分子间S---S接触。进行了磁性、电导率和光学测量,并根据扩展休克尔能带计算对结果进行了解释。晶体材料在100K以上是顺磁性的,室温电导率σ(RT)为10(-5)-10(-6) S cm(-1);R = Et化合物稍高的电导率可能与更发达的能带结构有关。我们认为这些材料的基态是莫特-哈伯德绝缘体,在位库仑排斥能U约为1.0 eV。