Jin Hua, Kinser C Reagan, Bertin Paul A, Kramer Donald E, Libera Joseph A, Hersam Mark C, Nguyen Sonbinh T, Bedzyk Michael J
Department of Materials Science and Engineering, and Nanoscale Science, Engineering Center, Northwestern University, Evanston, Illinois 60208, USA.
Langmuir. 2004 Jul 20;20(15):6252-8. doi: 10.1021/la0496690.
The structure of self-assembled monolayers (SAMs) of undecylenic acid methyl ester (SAM-1) and undec-10-enoic acid 2-bromo-ethyl ester (SAM-2) grown on hydrogen-passivated Si(111) were studied by X-ray reflectivity (XRR), X-ray standing waves (XSW), X-ray fluorescence (XRF), atomic force microscopy, and X-ray photoelectron spectroscopy (XPS). The two different SAMs were grown by immersion of H-Si(111) substrates into the two different concentrated esters. UV irradiation during immersion was used to create Si dangling bond sites that act as initiators of the surface free-radical addition process that leads to film growth. The XRR structural analysis reveals that the molecules of SAM-1 and SAM-2 respectively have area densities corresponding to 50% and 57% of the density of Si(111) surface dangling bonds and produce films with less than 4 angstroms root-mean-square roughness that have layer thicknesses of 12.2 and 13.2 angstroms. Considering the molecular lengths, these thicknesses correspond to a 38 degrees and 23 degrees tilt angle for the respective molecules. For SAM-2/Si(111) samples, XRF analysis reveals a 0.58 monolayer (ML) Br total coverage. Single-crystal Bragg diffraction XSW analysis reveals (unexpectedly) that 0.48 ML of these Br atoms are at a Si(111) lattice position height that is identical to the T1 site that was previously found by XSW analysis for Br adsorbed onto Si(111) from a methanol solution and from ultrahigh vacuum. From the combined XPS, XRR, XRF, and XSW evidence, it is concluded that Br abstraction by reactive surface dangling bonds competes with olefin addition to the surface.
通过X射线反射率(XRR)、X射线驻波(XSW)、X射线荧光(XRF)、原子力显微镜和X射线光电子能谱(XPS)研究了在氢钝化的Si(111)上生长的十一碳烯酸甲酯(SAM-1)和10-十一碳烯酸2-溴乙酯(SAM-2)自组装单分子层(SAMs)的结构。通过将H-Si(111)衬底浸入两种不同的浓酯中来生长这两种不同的SAMs。浸入过程中的紫外线照射用于产生Si悬空键位点,这些位点作为导致薄膜生长的表面自由基加成过程的引发剂。XRR结构分析表明,SAM-1和SAM-2的分子分别具有对应于Si(111)表面悬空键密度50%和57%的面积密度,并产生均方根粗糙度小于4埃、层厚度分别为12.2埃和13.2埃的薄膜。考虑到分子长度,这些厚度分别对应于各自分子38度和23度的倾斜角。对于SAM-2/Si(111)样品,XRF分析显示Br的总覆盖量为0.58单层(ML)。单晶布拉格衍射XSW分析(出乎意料地)表明,这些Br原子中有0.48 ML处于与T1位点相同的Si(111)晶格位置高度,该T1位点先前通过XSW分析在甲醇溶液和超高真空下吸附到Si(111)上的Br中发现。从XPS、XRR、XRF和XSW的综合证据得出结论,反应性表面悬空键的Br提取与烯烃向表面的加成相互竞争。