Prosmiti Rita, López-López Sergio, García-Vela Alberto
Instituto de Matemáticas y Física Fundamental, C.S.I.C., Serrano 123, 28006 Madrid, Spain.
J Chem Phys. 2004 Apr 8;120(14):6471-7. doi: 10.1063/1.1665467.
A potential energy surface for the ground electronic state of the Ar-HI van der Waals complex is calculated at the coupled-cluster with single and double excitations and a noniterative perturbation treatment of triple excitations [CCSD(T)] level of theory. Calculations are performed using for the iodine atom a correlation consistent triple-zeta valence basis set in conjunction with large-core Stuttgart-Dresden-Bonn relativistic pseudopotential, whereas specific augmented correlation consistent basis sets are employed for the H and Ar atoms supplemented with an additional set of bond functions. In agreement with previous studies, the equilibrium structure is found to be linear Ar-I-H, with a well depth of 205.38 cm(-1). Another two secondary minima are also predicted at a linear and bent Ar-H-I configurations with well depths of 153.57 and 151.57 cm(-1), respectively. The parametrized CCSD(T) potential is used to calculate rovibrational bound states of Ar-HI/Ar-DI complexes, and the vibrationally averaged structures of the different isomers are determined. Spectroscopic constants are also computed from the CCSD(T) surface and their comparison with available experimental data demonstrates the quality of the present surface in the corresponding configuration regions.
在耦合簇单双激发以及三激发的非迭代微扰处理[CCSD(T)]理论水平下,计算了Ar-HI范德华复合物基态的势能面。对碘原子使用相关一致三ζ价基组并结合大核斯图加特-德累斯顿-波恩相对论赝势进行计算,而对H和Ar原子采用特定的增强相关一致基组,并补充了一组键函数。与先前的研究一致,发现平衡结构为线性Ar-I-H,阱深为205.38 cm⁻¹。还预测了另外两个次级极小值,分别为线性和弯曲的Ar-H-I构型,阱深分别为153.57和151.57 cm⁻¹。参数化的CCSD(T)势能用于计算Ar-HI/Ar-DI复合物的振转束缚态,并确定不同异构体的振动平均结构。还从CCSD(T)表面计算了光谱常数,将其与现有实验数据进行比较,证明了当前表面在相应构型区域的质量。