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在存在截短型Bid(tBid)的情况下,Bax会增大大鼠脑线粒体电压依赖性阴离子通道的孔径。

Bax increases the pore size of rat brain mitochondrial voltage-dependent anion channel in the presence of tBid.

作者信息

Banerjee Jyotirmoy, Ghosh Subhendu

机构信息

Department of Biophysics, University of Delhi South Campus, New Delhi 110021, India.

出版信息

Biochem Biophys Res Commun. 2004 Oct 8;323(1):310-4. doi: 10.1016/j.bbrc.2004.08.094.

Abstract

Voltage-dependent anion channel (VDAC), Bax, and tBid play a central role in apoptosis regulation but their functioning is still very controversial. VDAC forms voltage gated pore in planar lipid bilayers, and acts as the pathway for the movement of substances in and out of the mitochondria by passive diffusion. Here we report that there is increase in the pore size of VDAC in the presence of Bax and tBid through bilayer electrophysiological experiments. We hereby hypothesize that this increase in pore size might cause swelling in the mitochondria, leading to the rupture of mitochondrial outer membrane and release of cytochrome c causing brain cell death.

摘要

电压依赖性阴离子通道(VDAC)、Bax和tBid在细胞凋亡调控中起核心作用,但其功能仍极具争议。VDAC在平面脂质双分子层中形成电压门控孔,并通过被动扩散作为物质进出线粒体的途径。在此我们通过双层电生理实验报告,在存在Bax和tBid的情况下,VDAC的孔径会增大。我们据此推测,这种孔径的增大可能导致线粒体肿胀,进而导致线粒体外膜破裂和细胞色素c释放,从而引起脑细胞死亡。

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