Stroscio Joseph A, Celotta Robert J
Electron Physics Group, National Institute of Standards and Technology, Gaithersburg, MD 20899-8412, USA.
Science. 2004 Oct 8;306(5694):242-7. doi: 10.1126/science.1102370. Epub 2004 Sep 9.
We studied the dynamics of a single cobalt (Co) atom during lateral manipulation on a copper (111) surface in a low-temperature scanning tunneling microscope. The Co binding site locations were revealed in a detailed image that resulted from lateral Co atom motion within the trapping potential of the scanning tip. Random telegraph noise, corresponding to the Co atom switching between hexagonal close-packed (hcp) and face-centered cubic (fcc) sites, was seen when the tip was used to try to position the Co atom over the higher energy hcp site. Varying the probe tip height modified the normal copper (111) potential landscape and allowed the residence time of the Co atom in these sites to be varied. At low tunneling voltages (less than approximately 5 millielectron volts), the transfer rate between sites was independent of tunneling voltage, current, and temperature. At higher voltages, the transfer rate exhibited a strong dependence on tunneling voltage, indicative of vibrational heating by inelastic electron scattering.
我们在低温扫描隧道显微镜中研究了单个钴(Co)原子在铜(111)表面进行横向操纵时的动力学。钴结合位点的位置在一幅详细图像中得以揭示,该图像是由扫描针尖捕获势阱内钴原子的横向运动产生的。当使用针尖试图将钴原子定位在能量较高的六方密排(hcp)位点上方时,观察到了对应于钴原子在六方密排(hcp)和面心立方(fcc)位点之间切换的随机电报噪声。改变探针针尖高度会改变正常的铜(111)势场,并使得钴原子在这些位点的停留时间发生变化。在低隧穿电压(小于约5毫电子伏特)下,位点之间的转移速率与隧穿电压、电流和温度无关。在较高电压下,转移速率对隧穿电压表现出强烈的依赖性,这表明存在非弹性电子散射导致的振动加热。