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ScTaN₂中的金属-金属键合。ScN-TaN体系中的一种新化合物。

Metal-metal bonding in ScTaN2. A new compound in the system ScN-TaN.

作者信息

Niewa R, Zherebtsov D A, Schnelle W, Wagner F R

机构信息

Max-Planck-Institut für Chemische Physik fester Stoffe, Nöthnitzer Str. 40, 01187 Dresden, Germany.

出版信息

Inorg Chem. 2004 Oct 4;43(20):6188-94. doi: 10.1021/ic040027+.

Abstract

Gray microcrystalline powders of ScTaN(2) were prepared from solid-state reactions of delta-ScN with Ta(3)N(5) powders at T = 1770 K. According to thermal analyses the compound is stable against oxidation by O(2) up to temperatures of T = 800 K. In an Ar atmosphere ScTaN(2) decomposes above T = 1250 K and in a N(2) atmosphere above T = 2000 K under release of N(2) to form delta-ScN and beta-Ta(2)N. The crystal structure (space group P6(3)/mmc, No. 194, a = 305.34(3) pm, c = 1056.85(9) pm, Z = 2) was refined on the basis of X-ray and neutron powder diffraction data. It comprises alternating layers of ScN(6/3) octahedra and trigonal TaN(6/3) prisms, which are also observed in the binary nitrides delta-ScN and theta-TaN, respectively. A small degree of anti-site defects (about 5%) was detected. Only a small solubility of ScN in epsilon-TaN was observed, while the solubility of TaN in delta-ScN is >/=10 mol % at T = 1820 K. ScTaN(2) is a diamagnetic small gap semiconductor or a semimetal, as inferred from magnetization and electrical resistivity measurements, consistent with band structure calculations. Chemical bonding analyses with the COHP method yield significant covalent Ta-Ta interactions. Topological analyses of the electron localization function reveal unexpected Ta-Ta three-center bonding basins within seemingly empty trigonal prisms of the TaN(6/3) layers.

摘要

通过在1770K温度下δ-ScN与Ta₃N₅粉末的固态反应制备了ScTaN₂的灰色微晶粉末。根据热分析,该化合物在高达800K的温度下对O₂氧化稳定。在Ar气氛中,ScTaN₂在1250K以上分解,在N₂气氛中在2000K以上分解,释放出N₂形成δ-ScN和β-Ta₂N。基于X射线和中子粉末衍射数据对晶体结构(空间群P6₃/mmc,编号194,a = 305.34(3) pm,c = 1056.85(9) pm,Z = 2)进行了精修。它由交替的ScN₆/₃八面体层和三角TaN₆/₃棱柱层组成,这也分别在二元氮化物δ-ScN和θ-TaN中观察到。检测到少量的反位缺陷(约5%)。仅观察到ScN在ε-TaN中的溶解度较小,而在1820K时TaN在δ-ScN中的溶解度≥10mol%。根据磁化和电阻率测量推断,ScTaN₂是一种抗磁性小间隙半导体或半金属,这与能带结构计算结果一致。用COHP方法进行的化学键分析产生了显著的Ta-Ta共价相互作用。电子定位函数的拓扑分析揭示了在TaN₆/₃层看似空的三角棱柱内意外的Ta-Ta三中心键合盆地。

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