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20和400微特斯拉、50赫兹磁场暴露对人类认知功能无影响。

No influence of 20 and 400 microT, 50 Hz magnetic field exposure on cognitive function in humans.

作者信息

Delhez Marie, Legros Jean-Jacques, Crasson Marion

机构信息

BelgianBioElectroMagnetic Group, Psychoneuroendocrinology Unit, University of Liège, CHU Sart-Tilman, Liège, Belgium.

出版信息

Bioelectromagnetics. 2004 Dec;25(8):592-8. doi: 10.1002/bem.20040.

Abstract

The aim of the present study was to investigate cognitive effects of a continuous, vertical extremely low frequency (ELF) magnetic field (MF) of 20 and 400 microT 50 Hz in healthy young men during performance on cognitive tests. Thirty-two volunteers (20-30 years old, mean 22.6 +/- 2.2 years) participated in this double blind study. The test protocol consisted of a set of tests: divided attention, flexibility, memory updating, digit span, digit span with articulary suppression, and time perception. The total duration of the exposure was 65 min. Participants were assigned four sessions: three conditions in the helmet (sham exposure, 20 and 400 microT) and one condition out of the helmet (to control the expectancy effect). No effect of MF exposure was observed on performance.

摘要

本研究的目的是调查在认知测试过程中,20和400微特斯拉、50赫兹的连续垂直极低频(ELF)磁场(MF)对健康年轻男性认知的影响。32名志愿者(年龄20 - 30岁,平均22.6 +/- 2.2岁)参与了这项双盲研究。测试方案包括一组测试:分散注意力、灵活性、记忆更新、数字广度、有言语抑制的数字广度和时间感知。暴露的总时长为65分钟。参与者被安排了四个阶段:头盔内的三种情况(假暴露、20和400微特斯拉)以及头盔外的一种情况(以控制预期效应)。未观察到磁场暴露对测试表现有影响。

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