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通过逐层沉积带有三(2,2'-联吡啶)钌(II)和二茂铁部分的聚电解质制备的异质结构超薄膜中的光电流产生。

Photocurrent generation in heterostructured ultrathin films fabricated by layer-by-layer deposition of polyelectrolytes bearing tris(2,2'-bipyridine)ruthenium(II) and ferrocene moieties.

作者信息

Fushimi Toshiki, Oda Akimichi, Ohkita Hideo, Ito Shinzaburo

机构信息

Department of Polymer Chemistry, Graduate School of Engineering, Kyoto University, Katsura, Nishikyo, Kyoto 615-8510, Japan.

出版信息

Langmuir. 2005 Feb 15;21(4):1584-9. doi: 10.1021/la047989d.

Abstract

The photoelectrochemical properties of single-component and heterostructured layer-by-layer deposited films bearing tris(2,2'-bipyridine)ruthenium(II) (Ru) moieties were investigated by photocurrent measurements in solutions in the presence of sacrificial reagents. The photocurrent increased with an increase in the thickness of the films and then had a maximum at a thickness of 10 nm. This increase demonstrates a light-harvesting effect based on excitation energy migration among the Ru moieties to the film/electrolyte interface. A cathodic photocurrent was observed for a heterostructured film where bilayers bearing ferrocene (Fc) moieties and bilayers bearing Ru moieties were deposited on an indium tin oxide (ITO) substrate in the order (ITO/Fc/Ru). On the other hand, an anodic photocurrent was observed for the reverse order film (ITO/Ru/Fc). These results show that the direction of the photocurrent is determined by the gradient of the redox potentials formed in the heterostructured films. The internal quantum efficiency for the ITO/Ru/Fc film was twice that for the single-component film (ITO/Ru). This enhancement of the quantum efficiency is due to suppression of charge recombination by successive electron transfers in the heterostructured film.

摘要

通过在存在牺牲试剂的溶液中进行光电流测量,研究了含有三(2,2'-联吡啶)钌(II)(Ru)部分的单组分和异质结构逐层沉积膜的光电化学性质。光电流随着膜厚度的增加而增加,然后在10 nm厚度时达到最大值。这种增加表明基于Ru部分之间的激发能量迁移到膜/电解质界面的光捕获效应。对于异质结构膜,观察到阴极光电流,其中含有二茂铁(Fc)部分的双层和含有Ru部分的双层按(ITO/Fc/Ru)顺序沉积在氧化铟锡(ITO)基板上。另一方面,对于反向顺序膜(ITO/Ru/Fc)观察到阳极光电流。这些结果表明,光电流的方向由异质结构膜中形成的氧化还原电位梯度决定。ITO/Ru/Fc膜的内量子效率是单组分膜(ITO/Ru)的两倍。量子效率的这种提高是由于异质结构膜中连续电子转移抑制了电荷复合。

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