Baker Robert J, Farley Robert D, Jones Cameron, Mills David P, Kloth Marc, Murphy Damien M
School of Chemistry, Cardiff University, PO Box 912, Cardiff CF10 3AT, UK.
Chemistry. 2005 May 6;11(10):2972-82. doi: 10.1002/chem.200401103.
Paramagnetic diazabutadienegallium(II or III) complexes, [(Ar-DAB)2Ga] and [{(Ar-DAB*)GaX}2] (X = Br or I; Ar-DAB = {N(Ar)C(H)}2, Ar = 2,6-diisopropylphenyl), have been prepared by reactions of an anionic gallium N-heterocyclic carbene analogue, [K(tmeda)][:Ga(Ar-DAB)], with either "GaI" or [MoBr2(CO)2(PPh3)2]. A related InIII complex, [(Ar-DAB*)InCl2(thf)], has also been prepared. These compounds were characterised by X-ray crystallography and EPR/ENDOR spectroscopy. The EPR spectra of all metal(III) complexes incorporating the Ar-DAB ligand, [(Ar-DAB(.))MX(2)(thf)(n)] (M = Al, Ga or In; X = Cl or I; n = 0 or 1) and [(Ar-DAB)2Ga], confirmed that the unpaired spin density is primarily ligand centred, with weak hyperfine couplings to Al (a = 2.85 G), Ga (a = 17-25 G) or In (a = 26.1 G) nuclei. Changing the N substituents of the diazabutadiene ligand to tert-butyl groups in the gallium complex, [(tBu-DAB*)GaI2] (tBu-DAB={N(tBu)C(H)}2), changes the unpaired electron spin distribution producing 1H and 14N couplings of 1.4 G and 8.62 G, while the aryl-substituted complex, [(Ar-DAB*)GaI2], produces couplings of about 5.0 G. These variations were also manifested in the gallium couplings, namely aGa approximately 1.4 G for [(tBu-DAB*)GaI2] and aGa approximately 25 G for [(Ar-DAB*)GaI2]. The EPR spectra of the gallium(II) and indium(II) diradical complexes, [{(Ar-DAB*)GaBr}2], [{(Ar-DAB*)GaI}2], [{(tBu-DAB*)GaI}2] and [{(Ar-DAB*)InCl}2], revealed doublet ground states, indicating that the Ga-Ga and In-In bonds prevent dipole-dipole coupling of the two unpaired electrons. The EPR spectrum of the previously reported complex, [(Ar-BIAN*)GaI2] (Ar-BIAN = bis(2,6-diisopropylphenylimino)acenaphthene) is also described. The hyperfine tensors for the imine protons, and the aryl and tert-butyl protons were obtained by ENDOR spectroscopy. In [(Ar-DAB*)GaI2], gallium hyperfine and quadrupolar couplings were detected for the first time.
顺磁性二氮杂丁二烯镓(II或III)配合物,[(Ar-DAB)₂Ga]和[{(Ar-DAB*)GaX}₂](X = Br或I;Ar-DAB = {N(Ar)C(H)}₂,Ar = 2,6-二异丙基苯基),是通过阴离子型镓氮杂环卡宾类似物[K(tmeda)][:Ga(Ar-DAB)]与“GaI”或[MoBr₂(CO)₂(PPh₃)₂]反应制备的。还制备了一种相关的InIII配合物[(Ar-DAB*)InCl₂(thf)]。这些化合物通过X射线晶体学和EPR/ENDOR光谱进行了表征。所有包含Ar-DAB配体的金属(III)配合物[(Ar-DAB(·))MX₂(thf)ₙ](M = Al、Ga或In;X = Cl或I;n = 0或1)和[(Ar-DAB)₂Ga]的EPR光谱证实,未成对自旋密度主要集中在配体上,与Al(a = 2.85 G)、Ga(a = 17 - 25 G)或In(a = 26.1 G)核有较弱的超精细耦合。在镓配合物[(tBu-DAB*)GaI₂](tBu-DAB = {N(tBu)C(H)}₂)中,将二氮杂丁二烯配体的N取代基变为叔丁基,改变了未成对电子的自旋分布,产生了1.4 G的¹H和8.62 G的¹⁴N耦合,而芳基取代的配合物[(Ar-DAB*)GaI₂]产生的耦合约为5.0 G。这些变化也体现在镓的耦合上,即[(tBu-DAB*)GaI₂]的aGa约为1.4 G,[(Ar-DAB*)GaI₂]的aGa约为25 G。镓(II)和铟(II)双自由基配合物[{(Ar-DAB*)GaBr}₂]、[{(Ar-DAB*)GaI}₂]、[{(tBu-DAB*)GaI}₂]和[{(Ar-DAB*)InCl}₂]的EPR光谱显示为双重基态,表明Ga - Ga和In - In键阻止了两个未成对电子的偶极 - 偶极耦合。还描述了先前报道的配合物[(Ar-BIAN*)GaI₂](Ar-BIAN = 双(2,6-二异丙基苯基亚氨基)苊)的EPR光谱。通过ENDOR光谱获得了亚胺质子以及芳基和叔丁基质子的超精细张量。在[(Ar-DAB*)GaI₂]中,首次检测到了镓的超精细和四极耦合。