用于半导体自旋电子学的基于MgO(100)的高自旋极化室温隧道注入器。
Highly spin-polarized room-temperature tunnel injector for semiconductor spintronics using MgO(100).
作者信息
Jiang X, Wang R, Shelby R M, Macfarlane R M, Bank S R, Harris J S, Parkin S S P
机构信息
IBM Research Division, Almaden Research Center, San Jose, California 95120, USA.
出版信息
Phys Rev Lett. 2005 Feb 11;94(5):056601. doi: 10.1103/PhysRevLett.94.056601.
The spin polarization of current injected into GaAs from a CoFe/MgO(100) tunnel injector is inferred from the electroluminescence polarization from GaAs/AlGaAs quantum well detectors. The polarization reaches 57% at 100 K and 47% at 290 K in a 5 T perpendicular magnetic field. Taking into account the field dependence of the luminescence polarization, the spin injection efficiency is at least 52% at 100 K, and 32% at 290 K. We find a nonmonotonic temperature dependence of the polarization which can be attributed to spin relaxation in the quantum well detectors.
从GaAs/AlGaAs量子阱探测器的电致发光极化推断出从CoFe/MgO(100)隧道注入器注入到GaAs中的电流的自旋极化。在5 T垂直磁场中，100 K时极化率达到57%，290 K时达到47%。考虑到发光极化的场依赖性，100 K时自旋注入效率至少为52%，290 K时为32%。我们发现极化存在非单调的温度依赖性，这可归因于量子阱探测器中的自旋弛豫。
Zotero 插件