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电荷密度波导体NbSe₃的纳米线和纳米带

Nanowires and nanoribbons of charge-density-wave conductor NbSe3.

作者信息

Hor Y S, Xiao Z L, Welp U, Ito Y, Mitchell J F, Cook R E, Kwok W K, Crabtree G W

机构信息

Materials Science Division, Argonne National Laboratory, Argonne, IL 60439, USA.

出版信息

Nano Lett. 2005 Feb;5(2):397-401. doi: 10.1021/nl0480722.

Abstract

We report synthesis of nanowires and nanoribbons of the charge-density-wave conductor NbSe(3) through direct reaction of Nb and Se powders. The transverse dimension of the obtained nanostructures, as identified with scanning/transmission electron microscopy, ranges from 20 to 700 nm. X-ray and selected area electron diffraction analyses indicate that these nanowires and nanoribbons are single crystalline. Four-probe resistivity measurements confirm the expected charge-density-wave transitions, and furthermore, we find significant enhancement in the depinning threshold fields, which we attribute to a confinement effect.

摘要

我们报道了通过铌粉和硒粉的直接反应合成电荷密度波导体NbSe(3)的纳米线和纳米带。通过扫描/透射电子显微镜鉴定,所获得的纳米结构的横向尺寸范围为20至700纳米。X射线和选区电子衍射分析表明,这些纳米线和纳米带是单晶的。四探针电阻率测量证实了预期的电荷密度波转变,此外,我们发现去钉扎阈值场有显著增强,我们将其归因于限域效应。

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