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基于聚芴的光电二极管中表面光电压与共混物形态之间的相关性。

Correlation between surface photovoltage and blend morphology in polyfluorene-based photodiodes.

作者信息

Chiesa Marco, Bürgi Lukas, Kim Ji-Seon, Shikler Rafi, Friend Richard H, Sirringhaus Henning

机构信息

Cavendish Laboratory, Madingley Road, Cambridge CB3 0HE, United Kingdom.

出版信息

Nano Lett. 2005 Apr;5(4):559-63. doi: 10.1021/nl047929s.

Abstract

We present a microscopic study of photoinduced charge generation in polyfluorene-based photovoltaic structures. The sub-100 nm lateral resolution of scanning Kelvin probe microscopy allows characterizing the three-dimensional structure of thin films of blends of poly-(9,9'-dioctylfluorene-co-benzothiadiazole) (F8BT) and poly-(9,9'-dioctylfluorene-co-bis-N,N'-(4-butylphenyl)-bis-N,N'-phenyl-1,4-phenylenediamine) (PFB). From the strong correlation between surface photovoltage and blend morphology, we propose a simple model for the lateral and vertical film structure identifying in particular those regions with the most efficient conduction pathway for the photocurrent.

摘要

我们展示了对基于聚芴的光伏结构中光生电荷产生的微观研究。扫描开尔文探针显微镜低于100 nm的横向分辨率能够表征聚(9,9'-二辛基芴-共-苯并噻二唑)(F8BT)与聚(9,9'-二辛基芴-共-双-N,N'-(4-丁基苯基)-双-N,N'-苯基-1,4-苯二胺)(PFB)共混物薄膜的三维结构。基于表面光电压与共混物形态之间的强相关性,我们提出了一个关于薄膜横向和纵向结构的简单模型,特别确定了那些具有最有效光电流传导路径的区域。

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