使用纳米晶硅的红色电致发光器件的亮度和稳定性得到显著提高。

Significant improvement of luminance and stability of a red electroluminescent device using nanocrystalline silicon.

作者信息

Sato Keisuke, Hirakuri Kenji, Izumi Tomio

机构信息

Department of Electronic and Computer Engineering, Tokyo Denki University, Ishizaka, Hatoyama, Hikigun, Saitama 350-0394, Japan.

出版信息

J Nanosci Nanotechnol. 2005 May;5(5):738-41. doi: 10.1166/jnn.2005.106.

DOI:10.1166/jnn.2005.106

PMID:16010931

Abstract

An electroluminescent (EL) device using nanocrystalline silicon (nc-Si) was fabricated by annealing after cosputtering of Si chips and silicon dioxide target and subsequent hydrofluoric acid solution treatment. The device emitted a red light with a peak at 670 nm by applying a low direct current (DC) operating voltage of 4.5 V. The external quantum efficiency (EQE) of red luminescence at 4.5 V was 0.35%. Moreover, the intensity of red luminescence was very stable for an operating time of 15000 min. These results are a strong indication that the HF-treated device can be adapted to future light-related devices.

摘要

通过对硅芯片和二氧化硅靶进行共溅射并随后进行氢氟酸溶液处理后退火，制备了一种使用纳米晶硅（nc-Si）的电致发光（EL）器件。通过施加4.5V的低直流（DC）工作电压，该器件发出峰值波长为670nm的红光。在4.5V时红色发光的外部量子效率（EQE）为0.35%。此外，红色发光强度在15000分钟的工作时间内非常稳定。这些结果有力地表明，经过HF处理的器件可应用于未来与光相关的器件。