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无序半导体聚合物中电荷载流子迁移率的统一描述

Unified description of charge-carrier mobilities in disordered semiconducting polymers.

作者信息

Pasveer W F, Cottaar J, Tanase C, Coehoorn R, Bobbert P A, Blom P W M, de Leeuw D M, Michels M A J

机构信息

Group Polymer Physics, Eindhoven Polymer Laboratories and Dutch Polymer Institute, Technische Universiteit Eindhoven, P.O. Box 513, 5600 MB Eindhoven, The Netherlands.

出版信息

Phys Rev Lett. 2005 May 27;94(20):206601. doi: 10.1103/PhysRevLett.94.206601. Epub 2005 May 23.

Abstract

From a numerical solution of the master equation for hopping transport in a disordered energy landscape with a Gaussian density of states, we determine the dependence of the charge-carrier mobility on temperature, carrier density, and electric field. Experimental current-voltage characteristics in devices based on semiconducting polymers are excellently reproduced with this unified description of the mobility. At room temperature it is mainly the dependence on carrier density that plays an important role, whereas at low temperatures and high fields the electric field dependence becomes important. Omission in the past of the carrier-density dependence has led to an underestimation of the hopping distance and the width of the density of states in these polymers.

摘要

通过对具有高斯态密度的无序能量景观中跳跃传输的主方程进行数值求解,我们确定了电荷载流子迁移率对温度、载流子密度和电场的依赖性。基于半导体聚合物的器件中的实验电流 - 电压特性通过这种迁移率的统一描述得到了很好的再现。在室温下,主要是对载流子密度的依赖性起重要作用,而在低温和高场下,电场依赖性变得重要。过去忽略载流子密度依赖性导致对这些聚合物中跳跃距离和态密度宽度的低估。

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