Karapanagiotis Ioannis, Gerberich William W
Ormylia Art Diagnosis Centre, Sacred Convent of Annunciation, 63071 Ormylia, Chalkidiki, Greece.
Langmuir. 2005 Sep 27;21(20):9194-8. doi: 10.1021/la050998h.
Nanoindentation-induced defects on ultrathin (h = 17 nm) polystyrene (PS) films that are spin cast on silicon (Si) substrates, with residual depths of penetration lower than the film thickness (<17 nm), can either grow to initiate dewetting or level, which results in a flat polymer surface, upon heating above the glass-transition temperature (T(g)). The excess surface energy (DeltaF(gamma)) of the system, which is added to the initially flat coating with the formation of an indent, provides a critical value, DeltaF(gamma,crit) = 6.1 x 10(-16) J, which determines indent evolution upon annealing. An indent grows when DeltaF(gamma) > DeltaF(gamma,crit) and levels when DeltaF(gamma) < DeltaF(gamma,crit). This conclusion is in agreement with previous reports, which used DeltaF(gamma) to distinguish the two (dewetting/leveling) opposing processes (1) in the case of indents deeper than the film thickness and (2) in the case of built-in ordered surface disturbances by capillary force lithography.
在硅(Si)衬底上旋涂的超薄(h = 17 nm)聚苯乙烯(PS)薄膜上,通过纳米压痕产生的缺陷,其残余穿透深度低于薄膜厚度(<17 nm),在加热到高于玻璃化转变温度(T(g))时,这些缺陷要么生长引发去湿,要么变平,从而使聚合物表面变得平整。系统的过剩表面能(DeltaF(gamma)),它随着压痕的形成被添加到初始平整的涂层中,提供了一个临界值DeltaF(gamma,crit) = 6.1 x 10(-16) J,该临界值决定了退火时压痕的演变。当DeltaF(gamma) > DeltaF(gamma,crit)时,压痕生长;当DeltaF(gamma) < DeltaF(gamma,crit)时,压痕变平。这一结论与先前的报道一致,先前的报道使用DeltaF(gamma)来区分两种(去湿/变平)相反的过程:(1)在压痕深度大于薄膜厚度的情况下;(2)在通过毛细力光刻产生的内置有序表面扰动的情况下。