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通过电检测磁共振研究有机发光二极管中的输运与复合

Transport and recombination in organic light-emitting diodes studied by electrically detected magnetic resonance.

作者信息

Graeff C F O, Silva G B, Nüesch F, Zuppiroli L

机构信息

Departamento de Física e Matemática, FFCLRP-USP, Av. Bandeirantes 3900, 14040-901, Ribeirão Preto, Brazil.

出版信息

Eur Phys J E Soft Matter. 2005 Sep;18(1):21-8. doi: 10.1140/epje/i2005-10026-6. Epub 2005 Sep 20.

Abstract

We have used electrically detected magnetic resonance (EDMR) to study a series of multilayer organic devices based on aluminum (III) 8-hydroxyquinoline (Alq3). These devices were designed to identify the microscopic origin of different spin-dependent processes, i.e. hopping and exciton formation. The EDMR signal in organic light-emitting diodes (OLEDs) based on Alq3 is only observed when the device is electroluminescent and is assigned to spin-dependent exciton formation. It can be decomposed in at least two Gaussians: one with peak-to-peak line (deltaH(PP)) of 1.6 mT and another with deltaH(PP) of 2.0 to 3.4 mT, depending on bias and temperature. The g-factors of the two components are barely distinguishable and close to 2.003. The broad line is attributed to the resonance in Alq3 anions, while the other line is attributed to cationic states. These attributions are supported by line shape and its electrical-field dependence of unipolar Alq3-based diodes, where hopping process related to dication and dianion formation is observed. In these unipolar devices, it is shown that the signal coming from spin-dependent hopping occurs close to organic semiconductor/metal interfaces. The sign of the magnetic-resonance-induced conductivity change is dominated by charge injection rather than charge mobility. Our results indicate that the probability of singlet exciton formation in our OLEDs is smaller than 25%.

摘要

我们使用电检测磁共振(EDMR)来研究一系列基于铝(III)8-羟基喹啉(Alq3)的多层有机器件。这些器件旨在确定不同自旋相关过程的微观起源,即跳跃和激子形成。基于Alq3的有机发光二极管(OLED)中的EDMR信号仅在器件电致发光时才被观察到,并归因于自旋相关的激子形成。它可以分解为至少两个高斯峰:一个峰峰值线宽(deltaH(PP))为1.6 mT,另一个deltaH(PP)为2.0至3.4 mT,这取决于偏置和温度。这两个分量的g因子几乎无法区分,接近2.003。宽线归因于Alq3阴离子中的共振,而另一条线归因于阳离子态。这些归属得到了基于单极Alq3的二极管的线形及其电场依赖性的支持,在该二极管中观察到了与二价阳离子和二价阴离子形成相关的跳跃过程。在这些单极器件中,结果表明来自自旋相关跳跃的信号出现在有机半导体/金属界面附近。磁共振诱导的电导率变化的符号主要由电荷注入而非电荷迁移率决定。我们的结果表明,我们的OLED中单线态激子形成的概率小于25%。

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