水冲洗对聚（3,4-亚乙基二氧噻吩）：聚（苯乙烯磺酸盐）薄膜结构和性能的影响。

Influence of a water rinse on the structure and properties of poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) films.

作者信息

DeLongchamp Dean M, Vogt Bryan D, Brooks Charles M, Kano Kenji, Obrzut Jan, Richter Curt A, Kirillov Oleg A, Lin Eric K

机构信息

Polymers Division and Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA.

出版信息

Langmuir. 2005 Nov 22;21(24):11480-3. doi: 10.1021/la051403l.

DOI:10.1021/la051403l

PMID:16285829

Abstract

Poly(3,4-ethylene dioxythiophene):poly(styrene sulfonic acid) (PEDOT:PSS) films exhibit a complex structure of interconnected conductive PEDOT domains in an insulating PSS matrix that controls their electrical properties. This structure is modified by a water rinse, which removes PSS with negligible PEDOT loss. Upon PSS removal, film thickness is reduced by 35%, conductivity is increased by 50%, and a prominent dielectric relaxation is eliminated. These results suggest that the removed PSS is not associated with PEDOT and that the conductive domain network is not substantially altered by the removal of a significant fraction of insulator. The removal of PSS may benefit organic light emitting diode fabrication by reducing acid attack on indium tin oxide electrodes and lead to more robust performance in switching circuits by extending the working frequency range.

摘要

聚（3,4-亚乙基二氧噻吩）：聚（苯乙烯磺酸）（PEDOT:PSS）薄膜在绝缘的PSS基质中呈现出相互连接的导电PEDOT域的复杂结构，该结构控制着它们的电学性能。通过水洗可以改变这种结构，水洗会去除PSS，而PEDOT的损失可忽略不计。去除PSS后，薄膜厚度降低35%，电导率提高50%，并且消除了显著的介电弛豫。这些结果表明，去除的PSS与PEDOT不相关，并且去除大部分绝缘体并不会实质性改变导电域网络。去除PSS可能有利于有机发光二极管的制造，因为它可以减少对铟锡氧化物电极的酸侵蚀，并且通过扩展工作频率范围，在开关电路中实现更稳定的性能。