Pirttilä Terhi J, Pitkänen Asla
A.I. Virtanen Institute for Molecular Sciences, University of Kuopio, P.O. Box 1627, FIN-70211 Kuopio, Finland.
Neurosci Lett. 2006 Mar 6;395(2):108-13. doi: 10.1016/j.neulet.2005.10.091. Epub 2005 Nov 23.
Stroke is a major cause of epilepsy, but the molecular mechanisms underlying post-stroke epileptogenesis are unknown. The expression of cystatin C, a cysteine protease inhibitor, is increased in the hippocampus during status epilepticus (SE)-induced epileptogenesis, and regulates both cell death and birth. To test the hypothesis that increased cystatin C expression represents a common molecular alteration induced by epileptogenic brain insults, we investigated the time course, cellular localization, and association of cystatin C expression with neuronal damage during post-stroke epileptogenesis. Stroke was induced with photothrombosis, which leads to epilepsy in approximately 20-30% of rats. Cystatin C expression was increased in the CA1 area of the hippocampus 4 days after photothrombosis, when the diameter of the lesion was the largest. Double-labeling and confocal analysis indicated that cystatin C was expressed in astrocytes and microglia. Unlike after SE, cystatin C expression did not change in the dentate gyrus. Also, increased cystatin C expression was not associated with neurodegeneration, which was demonstrated as an absence of Fluoro Jade B-positive cells in adjacent sections. The present study provides evidence that cystatin C may be involved in cellular alterations that occur after an epileptogenic insult, not only after SE but also after photothrombotic stroke.
中风是癫痫的主要病因,但中风后癫痫发生的分子机制尚不清楚。在癫痫持续状态(SE)诱导的癫痫发生过程中,半胱氨酸蛋白酶抑制剂胱抑素C在海马体中的表达增加,并且调节细胞死亡和细胞生成。为了验证胱抑素C表达增加代表由致痫性脑损伤诱导的一种常见分子改变这一假说,我们研究了中风后癫痫发生过程中胱抑素C表达的时间进程、细胞定位以及与神经元损伤的关联。采用光血栓形成法诱导中风,约20 - 30%的大鼠会因此引发癫痫。光血栓形成后4天,海马体CA1区的胱抑素C表达增加,此时损伤直径最大。双重标记和共聚焦分析表明,胱抑素C在星形胶质细胞和小胶质细胞中表达。与SE后不同,齿状回中的胱抑素C表达没有变化。此外,胱抑素C表达增加与神经退行性变无关,相邻切片中未出现氟玉红B阳性细胞即证明了这一点。本研究提供了证据表明,胱抑素C可能参与致痫性损伤后发生的细胞改变,不仅在SE后,而且在光血栓形成性中风后也是如此。