通过水辅助选择性蚀刻制备的取向碳纳米管堆叠体

Aligned carbon nanotube stacks by water-assisted selective etching.

作者信息

Zhu Lingbo, Xiu Yonghao, Hess Dennis W, Wong Ching-Ping

机构信息

School of Chemical & Biomolecular Engineering, Georgia Institute of Technology, 311 Ferst Drive, Atlanta, GA 30332, USA.

出版信息

Nano Lett. 2005 Dec;5(12):2641-5. doi: 10.1021/nl051906b.

DOI:10.1021/nl051906b

PMID:16351229

Abstract

Well-aligned, high-purity carbon nanotube (CNT) stacks of up to 10 layers fabricated in one batch process have been formed by water-assisted selective etching of carbon atoms. Etching takes place at the CNT caps as well as at the interface between CNTs and metal catalyst particles. This simple process generates high-purity CNTs and opens the CNT ends by removing the nanotube caps. High-resolution transmission electron microscopy indicates that the process does not damage CNT wall structures. A mechanism for stacked growth of CNT layers is proposed.

摘要

通过水辅助选择性蚀刻碳原子，已在一批工艺中形成了多达10层的排列良好、高纯度碳纳米管（CNT）堆叠结构。蚀刻发生在碳纳米管帽以及碳纳米管与金属催化剂颗粒之间的界面处。这个简单的过程产生了高纯度的碳纳米管，并通过去除纳米管帽打开了碳纳米管的端部。高分辨率透射电子显微镜表明该过程不会损坏碳纳米管壁结构。本文提出了一种碳纳米管层堆叠生长的机制。