Zhao Jialong, Bardecker Julie A, Munro Andrea M, Liu Michelle S, Niu Yuhua, Ding I-Kang, Luo Jingdong, Chen Baoquan, Jen Alex K-Y, Ginger David S
Department of Chemistry, University of Washington, Box 351700, Seattle, 98195-1700, USA.
Nano Lett. 2006 Mar;6(3):463-7. doi: 10.1021/nl052417e.
We report multilayer nanocrystal quantum dot light-emitting diodes (QD-LEDs) fabricated by spin-coating a monolayer of colloidal CdSe/CdS nanocrystals on top of thermally polymerized solvent-resistant hole-transport layers (HTLs). We obtain high-quality QD layers of controlled thickness (down to submonolayer) simply by spin-coating QD solutions directly onto the HTL. The resulting QD-LEDs exhibit narrow ( approximately 30 nm, fwhm) electroluminescence from the QDs with virtually no emission from the organic matrix at any voltage. Using multiple spin-on HTLs improves the external quantum efficiency of the QD-LEDs to approximately 0.8% at a brightness of 100 cd/m(2) (with a maximum brightness over 1,000 cd/m(2)). We conclude that QD-LEDs could be made more efficient by further optimization of the organic semiconductors.
我们报道了通过在热聚合的耐溶剂空穴传输层(HTL)顶部旋涂单层胶体CdSe/CdS纳米晶体制备的多层纳米晶体量子点发光二极管(QD-LED)。我们只需将量子点溶液直接旋涂到HTL上,就能获得厚度可控(低至亚单层)的高质量量子点层。由此产生的QD-LED在量子点处呈现出窄的(半高宽约为30nm)电致发光,在任何电压下有机基质几乎不发光。使用多个旋涂HTL可将QD-LED在100cd/m²亮度下的外量子效率提高到约0.8%(最大亮度超过1000cd/m²)。我们得出结论,通过进一步优化有机半导体,可以提高QD-LED的效率。