Lüssem Björn, Müller-Meskamp Lars, Karthäuser Silvia, Waser Rainer, Homberger Melanie, Simon Ulrich
Institute for Solid State Research and Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich GmbH, 52425 Jülich, Germany.
Langmuir. 2006 Mar 28;22(7):3021-7. doi: 10.1021/la052791u.
A method is presented for depositing mixed self-assembled monolayers (SAMs) of dodecanethiol (C12) and 4'-methyl-1,1'-biphenyl-4-butane (H3C-C6H4-C6H4-(CH2)4-SH, BP4) by insertion of BP4 into a closely packed SAM of dodecanethiol on Au(111). Insertion takes place at defect sites such as domain boundaries or etch pits in the gold surface that are characteristic of C12 monolayers on gold. With a lower probability, insertion also occurs beside defect sites inside dodecanethiol domains. Insertion at defect sites results in domains of BP4, whereas insertion into C12 domains leads to isolated BP4 molecules. The isolated BP4 molecules are shown not to move at room temperature. By comparing the apparent height of the isolated BP4 molecules and BP4 domains, it is proposed that the isolated molecules have the same conformation as in the full-coverage phase. A simple two-layer model is proposed to characterize the current transport through BP4. The decay constant beta for the phenylene groups is deduced from the apparent STM heights of the inserted BP4 islands compared to the STM heights of the C12 closely packed monolayers.
本文介绍了一种通过将4'-甲基-1,1'-联苯-4-丁烷(H3C-C6H4-C6H4-(CH2)4-SH,BP4)插入到金(111)表面紧密堆积的十二烷硫醇(C12)自组装单分子层(SAMs)中来沉积混合自组装单分子层的方法。插入发生在缺陷位点,如金表面的畴界或蚀刻坑,这些是金表面C12单分子层的特征。插入也有较低的概率发生在十二烷硫醇畴内缺陷位点旁边。在缺陷位点插入会形成BP4畴,而插入到C12畴中则会产生孤立的BP4分子。研究表明,孤立的BP4分子在室温下不会移动。通过比较孤立的BP4分子和BP4畴的表观高度,推测孤立分子具有与全覆盖相相同的构象。提出了一个简单的两层模型来描述通过BP4的电流传输。与C12紧密堆积单分子层的STM高度相比,从插入的BP4岛的表观STM高度推导出亚苯基的衰减常数β。