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量子点中的半整数填充因子态

Half-integer filling-factor states in quantum dots.

作者信息

Harju A, Saarikoski H, Räsänen E

机构信息

Laboratory of Physics, Helsinki University of Technology, P.O. Box 1100, FI-02015 HUT, Finland.

出版信息

Phys Rev Lett. 2006 Mar 31;96(12):126805. doi: 10.1103/PhysRevLett.96.126805. Epub 2006 Mar 29.

Abstract

The emergence of half-integer filling-factor states, such as upsilon=5/2 and 7/2, is found in quantum dots by using numerical many-electron methods. These states have interesting similarities and differences with their counterstates found in the two-dimensional electron gas. The upsilon=1/2 states in quantum dots are shown to have high overlaps with the composite fermion states. The lower overlap of the Pfaffian state indicates that electrons might not be paired in quantum dot geometry. The predicted upsilon=5/2 state has a high spin polarization, which may have an impact on the spin transport through quantum dot devices.

摘要

通过使用数值多电子方法,在量子点中发现了半整数填充因子态的出现,例如 υ = 5/2 和 7/2。这些态与其在二维电子气中发现的对应态有着有趣的异同。量子点中的 υ = 1/2 态被证明与复合费米子态有高重叠。Pfaffian 态的较低重叠表明电子在量子点几何结构中可能没有配对。预测的 υ = 5/2 态具有高自旋极化,这可能会对通过量子点器件的自旋输运产生影响。

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