Freeman Colin L, Claeyssens Frederik, Allan Neil L, Harding John H
School of Chemistry, University of Bristol, Cantock's Close, Bristol BS8 1TS, United Kingdom.
Phys Rev Lett. 2006 Feb 17;96(6):066102. doi: 10.1103/PhysRevLett.96.066102. Epub 2006 Feb 13.
Periodic ab initio density functional calculations on ultrathin films of AlN, BeO, GaN, SiC, ZnO, and ZnS demonstrate the stabilization of thicker films terminating with the polar {0001} surface via charge transfer and metallization of the surface layers. In contrast thinner films remove the dipole by adopting a graphiticlike structure in which the atoms are threefold coordinate. This structure is thermodynamically the most favorable for these thinner films. Implications for the crystal growth of wurtzite materials are discussed.
对AlN、BeO、GaN、SiC、ZnO和ZnS超薄膜进行的周期性从头算密度泛函计算表明,通过电荷转移和表面层金属化,以极性{0001}表面终止的较厚薄膜得以稳定。相比之下,较薄的薄膜通过采用类似石墨的结构(其中原子为三重配位)消除了偶极子。这种结构在热力学上对这些较薄的薄膜最为有利。文中还讨论了纤锌矿材料晶体生长的相关影响。