Marienfeld S, Sunagawa T, Fabrikant I I, Braun M, Ruf M-W, Hotop H
Fachbereich Physik, Universität Kaiserslautern, D-67653 Kaiserslautern, Germany.
J Chem Phys. 2006 Apr 21;124(15):154316. doi: 10.1063/1.2188939.
In a joint experimental and theoretical effort, we have studied dissociative electron attachment (DEA) to the CF3Br molecule at electron energies below 2 eV. Using two variants of the laser photoelectron attachment method with a thermal gas target (T(G) = 300 K), we measured the energy dependent yield for Br- formation over the range E = 3-1200 meV with resolutions of about 3 meV (E < 200 meV) and 35 meV. At the onsets for excitation of one and two quanta for the C-Br stretching mode nu3, downward cusps are detected. With reference to the recommended thermal (300 K) attachment rate coefficient k(A)(CF3Br) = 1.4 x 10(-8) cm3 s(-1), absolute cross sections have been determined for Br- formation. In addition, we studied Br- and (CF3Br)Br- formations with a seeded supersonic target beam (10% CF3Br in helium carrier gas, with a stagnation pressure of 1-4 bars and nozzle temperatures of 300 and 600 K) and found prominent structure in the anion yields due to cluster formation. Using the microwave pulse radiolysis swarm technique, allowing for controlled variation of the electron temperature by microwave heating, we studied the dependence of the absolute DEA rate coefficient on the mean electron energy E over the range of 0.04-2 eV at gas temperatures T(G) ranging from 173 to 600 K. For comparison with the experimental results, semiempirical resonance R-matrix calculations have been carried out. The input for the theory includes the known energetic and structural parameters of the neutral molecule and its anion; the parameters of the resonant anion curves are chosen with reference to the known thermal rate coefficient for the DEA process. For the gas temperature T(G) = 300 K, good overall agreement of the theoretical DEA cross section with the experimental results is observed; moreover, rate coefficients for Br- formation due to Rydberg electron transfer, calculated with both the experimental and the theoretical DEA cross sections, are found to agree with the previously reported absolute experimental values. At T(G) = 300 K, satisfactory agreement is also found between the calculated and experimental attachment rate coefficients for mean electron energies E = 0.04-2 eV. The strong increase of the measured rate coefficients with rising gas temperature, however, could be only partially recovered by the R-matrix results. The differences may result from the influence of thermal excitations of other vibrational modes not included in the theory.
通过实验和理论相结合的方法,我们研究了电子能量低于2电子伏特时CF3Br分子的解离电子附着(DEA)过程。使用带有热气体靶(T(G)=300K)的激光光电子附着方法的两种变体,我们在E = 3 - 1200毫电子伏特范围内,以约3毫电子伏特(E < 200毫电子伏特)和35毫电子伏特的分辨率测量了Br-形成的能量依赖产率。在C - Br伸缩模式ν3的一个和两个量子激发的起始点,检测到向下的尖峰。参照推荐的热(300K)附着速率系数k(A)(CF3Br)=1.4×10^(-8) 立方厘米每秒,确定了Br-形成的绝对截面。此外,我们使用种子超音速靶束(氦载气中10%的CF3Br,滞止压力为1 - 4巴,喷嘴温度为300K和600K)研究了Br-和(CF3Br)Br-的形成,发现由于团簇形成,阴离子产率有显著结构。使用微波脉冲辐射分解群技术,通过微波加热可控制电子温度的变化,我们研究了在气体温度T(G)为173至600K范围内,绝对DEA速率系数对平均电子能量E在0.04 - 2电子伏特范围内的依赖性。为了与实验结果进行比较,进行了半经验共振R矩阵计算。该理论的输入包括中性分子及其阴离子的已知能量和结构参数;共振阴离子曲线的参数参照DEA过程的已知热速率系数进行选择。对于气体温度T(G)=300K,观察到理论DEA截面与实验结果总体上有良好的一致性;此外,用实验和理论DEA截面计算的由于里德堡电子转移导致的Br-形成的速率系数,与先前报道的绝对实验值相符。在T(G)=300K时,对于平均电子能量E = 0.04 - 2电子伏特,计算得到的附着速率系数与实验值之间也发现了令人满意的一致性。然而,测量的速率系数随气体温度升高的强烈增加,只能部分地由R矩阵结果重现。差异可能源于理论中未包括的其他振动模式的热激发的影响。