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SnS和SnS⁺的电子态:组态相互作用研究

Electronic states of SnS and SnS+: a configuration interaction study.

作者信息

Giri Dipankar, Das Kalyan Kumar

机构信息

Physical Chemistry Section, Department of Chemistry, Jadavpur University, Kolkata 700032, India.

出版信息

J Phys Chem A. 2005 Aug 18;109(32):7207-15. doi: 10.1021/jp051290e.

DOI:10.1021/jp051290e
PMID:16834085
Abstract

Ab initio based multireference configuration interaction calculations are carried out for SnS and its monopositive ion using effective core potentials. Potential energy curves and spectroscopic constants of the low-lying states of SnS and SnS+ are computed. The ground-state dissociation energies of the neutral and ionic species are about 4.71 and 2.86 eV, respectively which compare well with the available thermochemical data. The effect of d-electron correlation on the spectroscopic constants of a few low-lying states has been studied. The spin-orbit interaction has also been included to investigate its effect on the spectroscopic properties of both SnS and SnS+. Dipole moment and transition moment curves are also constructed as a function of the bond length. Transition probabilities of some dipole-allowed and spin-forbidden transitions are studied. Radiative lifetimes of a few low-lying states are estimated. The E1sigma+-X1sigma+ transition of SnS is predicted to be the strongest one. The components of the A2sigma(+)(1/2)-X2(2)pi(1/2) transition with parallel and perpendicular polarization are separately analyzed. The vertical ionization energies of the ground-state SnS to the ground and low-lying excited states of the monopositive ion are calculated.

摘要

使用有效核势对SnS及其单正离子进行基于从头算的多参考组态相互作用计算。计算了SnS和SnS⁺低能态的势能曲线和光谱常数。中性和离子物种的基态解离能分别约为4.71和2.86 eV,与现有的热化学数据比较吻合。研究了d电子相关对一些低能态光谱常数的影响。还包括自旋轨道相互作用以研究其对SnS和SnS⁺光谱性质的影响。偶极矩和跃迁矩曲线也作为键长的函数构建。研究了一些偶极允许和自旋禁戒跃迁的跃迁概率。估计了一些低能态的辐射寿命。预测SnS的E1σ⁺-X1σ⁺跃迁是最强的跃迁。分别分析了具有平行和垂直极化的A2σ⁺(1/2)-X2²π(1/2)跃迁的分量。计算了基态SnS到单正离子基态和低能激发态的垂直电离能。

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