Kuo Tz-Jun, Huang Michael H
Department of Chemistry, National Tsing Hua University, Hsinchu 30013, Taiwan.
J Phys Chem B. 2006 Jul 20;110(28):13717-21. doi: 10.1021/jp062854x.
Ultralong cadmium oxide nanowires were synthesized in high yield on gold-coated silicon substrates by using a vapor transport process. Cadmium vapor generated by the carbothermal reduction of CdO powder in a tube furnace heated to 500 degrees C was carried to the substrate zone by an argon flow with a trace amount of oxygen. The CdO nanowires grew via a vapor-liquid-solid growth mechanism. The diameters of the nanowires are approximately 40-80 nm, and can reach lengths of 30-50 mum. Because the nanowire formation was gold particle catalyzed, patterned nanowire growth on substrates can be achieved. These nanowires grew along the [111] direction and have slightly rough surfaces due to the presence of crystalline CdO shells formed via a physical vapor deposition process. Interesting CdO nanowires with a necklace-like morphology were also observed in a small region of the substrate, where the oxygen supply may be ample to facilitate the lateral growth of rhombohedron-shaped crystals over the straight wires. Electron diffraction and high-resolution TEM results suggest that these side crystals should grow epitaxially on the wire surfaces. The band gap of the CdO nanowires with smoother surfaces was determined to be approximately 2.53 eV. These nanowires exhibit a relatively weak emission band centered at approximately 550 nm.
通过气相传输法在镀金硅衬底上高产率合成了超长氧化镉纳米线。在加热至500℃的管式炉中,CdO粉末经碳热还原产生的镉蒸气,由含微量氧气的氩气流携带至衬底区域。CdO纳米线通过气-液-固生长机制生长。纳米线直径约为40 - 80nm,长度可达30 - 50μm。由于纳米线的形成是由金颗粒催化的,因此可以在衬底上实现图案化纳米线生长。这些纳米线沿[111]方向生长,由于通过物理气相沉积过程形成的结晶CdO壳层的存在,其表面略显粗糙。在衬底的一个小区域还观察到有趣的项链状形态的CdO纳米线,在该区域氧气供应可能充足,有利于菱形晶体在直线状纳米线上的横向生长。电子衍射和高分辨率透射电镜结果表明,这些侧晶体应在纳米线表面外延生长。表面较光滑的CdO纳米线的带隙测定为约2.53eV。这些纳米线在约550nm处呈现出相对较弱的发射带。