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用于在硅表面上进行单壁碳纳米管的位点特异性生长的含Fe纳米颗粒的抗表面活性剂组装。

Surfactant-resisted assembly of Fe-containing nanoparticles for site-specific growth of SWNTs on Si surface.

作者信息

He Maoshuai, Ling Xing, Zhang Jin, Liu Zhongfan

机构信息

Key Laboratory for the Physics and Chemistry of Nanodevices, Centre for Nanoscale Science and Technology, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, PR China.

出版信息

J Phys Chem B. 2005 Jun 2;109(21):10946-51. doi: 10.1021/jp051127j.

Abstract

This paper describes a facile approach to the site-specific growth of single-walled carbon nanotubes (SWNTs) on silicon surfaces by chemical vapor deposition (CVD). The approach is based on the use of a surfactant as a resist to define patterns of silicon oxide nanodomains onto which nanoparticles of iron hydroxide (Fe(OH)3), 1-5 nm diameter, could be deposited. In base growth mode, the SWNTs can grow from the oxide nanodomains. By controlling the location of oxide nanodomains, site-specific growth could be obtained. The iron hydroxide nanoparticles were prepared by hydrolysis of ferric chloride (FeCl3). Patterned hydroxylated silicon oxide nanodomains were created by scanning probe oxidation (SPO) of silicon substrates modified with aminopropyltrimethoxysilane (APTMS, H2N(CH2)3Si(OCH3)3). Due to electrostatic interaction, Fe(OH)3 nanoparticles can be selectively deposited on hydroxyl groups present on silicon oxide nanodomains. To inhibit the assembly of the nanoparticles on a APTMS-coated silicon surface, sodium dodecyl sulfate (SDS) was introduced, which restricted deposition to the hydroxylated nanodomains. A model mechanism for the selective deposition mechanism has been proposed. It was possible to convert the patterned Fe(OH)3 nanoparticles to iron oxide, which served as a catalyst for the site-specific growth of SWNTs. Raman spectroscopy and AFM were used to characterize the nanotubes on the Si substrate. This will offer the possibility for future integration with conventional microelectronics as well as the development of novel devices.

摘要

本文描述了一种通过化学气相沉积(CVD)在硅表面实现单壁碳纳米管(SWNTs)位点特异性生长的简便方法。该方法基于使用表面活性剂作为抗蚀剂来定义氧化硅纳米域的图案,直径为1 - 5 nm的氢氧化铁(Fe(OH)3)纳米颗粒可以沉积在这些图案上。在碱生长模式下,SWNTs可以从氧化纳米域生长。通过控制氧化纳米域的位置,可以实现位点特异性生长。氢氧化铁纳米颗粒通过氯化铁(FeCl3)水解制备。通过对用氨丙基三甲氧基硅烷(APTMS,H2N(CH2)3Si(OCH3)3)修饰的硅基板进行扫描探针氧化(SPO),创建图案化的羟基化氧化硅纳米域。由于静电相互作用,Fe(OH)3纳米颗粒可以选择性地沉积在氧化硅纳米域上存在的羟基上。为了抑制纳米颗粒在APTMS涂层硅表面的组装,引入了十二烷基硫酸钠(SDS),这将沉积限制在羟基化纳米域上。提出了一种选择性沉积机制的模型。可以将图案化的Fe(OH)3纳米颗粒转化为氧化铁,其作为SWNTs位点特异性生长的催化剂。拉曼光谱和原子力显微镜用于表征硅基板上的纳米管。这将为未来与传统微电子集成以及新型器件的开发提供可能性。

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