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半导体单壁碳纳米管中的激子结合能。

Exciton binding energy in semiconducting single-walled carbon nanotubes.

作者信息

Ma Ying-Zhong, Valkunas Leonas, Bachilo Sergei M, Fleming Graham R

出版信息

J Phys Chem B. 2005 Aug 25;109(33):15671-4. doi: 10.1021/jp053011t.

Abstract

The exciton binding energy serves as a critical criterion for identification of the nature of elementary excitations (neutral excitons versus a pair of charged carriers) in semiconductor materials. An exciton binding energy of 0.41 eV is determined experimentally for a selected nanotube type, the (8,3) tube, confirming the excitonic nature of the elementary excitations. This determination is made from the energy difference between an electron-hole continuum and its precursor exciton. The electron-hole continuum results from dissociation of excitons following extremely rapid exciton-exciton annihilation and possibly also ultrafast relaxation from the second to the first exciton states and is characterized by distinct spectroscopic and dynamic signatures.

摘要

激子结合能是确定半导体材料中基本激发(中性激子与一对带电载流子)性质的关键标准。通过实验确定了一种选定的纳米管类型(8,3)管的激子结合能为0.41电子伏特,证实了基本激发的激子性质。这一确定是根据电子 - 空穴连续体与其前驱激子之间的能量差得出的。电子 - 空穴连续体是激子在极快速的激子 - 激子湮灭之后解离产生的,也可能是从第二激子态到第一激子态的超快弛豫导致的,其特征是具有独特的光谱和动力学特征。

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