Suppr超能文献

在台阶状铂表面上,当氧压高于10⁻⁵托时增强的低温CO氧化反应。

Enhanced low-temperature CO oxidation on a stepped platinum surface for oxygen pressures above 10(-5) Torr.

作者信息

Lewis Henry D, Burnett Daniel J, Gabelnick Aaron M, Fischer Daniel A, Gland John L

机构信息

Departments of Chemical Engineering and Chemistry, University of Michigan, Ann Arbor Michigan 48109, USA.

出版信息

J Phys Chem B. 2005 Nov 24;109(46):21847-57. doi: 10.1021/jp0486696.

Abstract

The rate of CO oxidation has been characterized on the stepped Pt(411) surface for oxygen pressures up to 0.002 Torr, over the 100-1000 K temperature range. CO oxidation was characterized using both temperature-programmed reaction spectroscopy (TPRS) and in situ soft X-ray fluorescence yield near-edge spectroscopy (FYNES). New understanding of the important role surface defects play in accelerating CO oxidation for oxygen pressure above 10(-5) Torr is presented in this paper for the first time. For saturated monolayers of CO, the oxidation rate increases and the activation energy decreases significantly for oxygen pressures above 10(-5) Torr. This enhanced CO oxidation rate is caused by a change in the rate-limiting step to a surface reaction limited process above 10(-5) Torr oxygen from a CO desorption limited process at lower oxygen pressure. For example, in oxygen pressures above 0.002 Torr, CO(2) formation begins at 275 K even for the CO saturated monolayer, which is well below the 350 K onset temperature for CO desorption. Isothermal kinetic measurements in flowing oxygen for this stepped surface indicate that activation energies and preexponential factors depend strongly on oxygen pressure, a factor that has not previously been considered critical for CO oxidation on platinum. As oxygen pressure is increased from 10(-6) to 0.002 Torr, the oxidation activation energies for the saturated CO monolayer decrease from 24.1 to 13.5 kcal/mol for reaction over the 0.95-0.90 ML CO coverage range. This dramatic decrease in activation energy is associated with a simple increase in oxygen pressure from 10(-5) to 10(-3) Torr. Activation energies as low as 7.8 kcal/mol were observed for oxidation of an initially saturated CO layer reacting over the 0.4-0.25 ML coverage range in oxygen pressure of 0.002 Torr. These dramatic changes in reaction mechanism with oxygen pressure for stepped surfaces are consistent with mechanistic models involving transient low activation energy dissociation sites for oxygen associated with step sites. Taken together these experimental results clearly indicate that surface defects play a key role in increasing the sensitivity of CO oxidation to oxygen pressure.

摘要

在100 - 1000K的温度范围内,研究了台阶状Pt(411)表面上一氧化碳(CO)在高达0.002托的氧压下的氧化速率。使用程序升温反应光谱(TPRS)和原位软X射线荧光产额近边光谱(FYNES)对CO氧化进行了表征。本文首次提出了对表面缺陷在加速氧压高于10⁻⁵托时CO氧化中所起重要作用的新认识。对于CO的饱和单层,当氧压高于10⁻⁵托时,氧化速率增加且活化能显著降低。这种增强的CO氧化速率是由于速率限制步骤从较低氧压下的CO解吸限制过程转变为高于10⁻⁵托氧压下的表面反应限制过程。例如,在高于0.002托的氧压下,即使对于CO饱和单层,CO₂的形成在275K时就开始了,这远低于CO解吸的350K起始温度。对该台阶表面在流动氧中的等温动力学测量表明,活化能和指前因子强烈依赖于氧压,而这一因素以前并未被认为对铂上的CO氧化至关重要。当氧压从10⁻⁶托增加到0.002托时,在0.95 - 0.90单层CO覆盖范围内反应时,饱和CO单层的氧化活化能从24.1千卡/摩尔降至13.5千卡/摩尔。活化能的这种显著降低与氧压从10⁻⁵托简单增加到10⁻³托有关。在0.002托的氧压下,对于初始饱和的CO层在0.4 - 0.25单层覆盖范围内反应的氧化,观察到活化能低至7.8千卡/摩尔。台阶表面的反应机理随氧压的这些显著变化与涉及与台阶位点相关的氧的瞬态低活化能解离位点的机理模型一致。综合这些实验结果清楚地表明,表面缺陷在提高CO氧化对氧压的敏感性方面起关键作用。

文献AI研究员

20分钟写一篇综述,助力文献阅读效率提升50倍。

立即体验

用中文搜PubMed

大模型驱动的PubMed中文搜索引擎

马上搜索

文档翻译

学术文献翻译模型,支持多种主流文档格式。

立即体验